Semiconductor device

ABSTRACT

A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.

BACKGROUND OF THE INVENTION 1. Field of the Invention

One embodiment of the present invention relates to a semiconductordevice including an oxide semiconductor.

Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of one embodiment of theinvention disclosed in this specification and the like relates to anobject, a method, or a manufacturing method. In addition, one embodimentof the present invention relates to a process, a machine, manufacture,or a composition of matter. Specifically, examples of the technicalfield of one embodiment of the present invention disclosed in thisspecification include a semiconductor device, a display device, a liquidcrystal display device, a light-emitting device, a lighting device, apower storage device, a storage device, a method for driving any ofthem, and a method for manufacturing any of them.

In this specification and the like, a semiconductor device generallymeans a device that can function by utilizing semiconductorcharacteristics. A transistor and a semiconductor circuit areembodiments of semiconductor devices. In some cases, a storage device, adisplay device, or an electronic device includes a semiconductor device.

2. Description of the Related Art

Attention has been focused on a technique for forming a transistor usinga semiconductor thin film formed over a substrate having an insulatingsurface (also referred to as a thin film transistor (TFT)). Thetransistor is used in a wide range of electronic devices such as anintegrated circuit (IC) and an image display device (display device). Asilicon-based semiconductor material is widely known as a material for asemiconductor thin film applicable to a transistor. As another example,an oxide semiconductor has been attracting attention.

For example, a transistor whose active layer includes an amorphous oxidesemiconductor containing indium (In), gallium (Ga), and zinc (Zn) isdisclosed in Patent Document 1.

REFERENCE Patent Document

[Patent Document 1] Japanese Published Patent Application No.2006-165528

SUMMARY OF THE INVENTION

High integration of an integrated circuit requires miniaturization of atransistor. However, it is known that miniaturization of a transistorcauses deterioration of or variations in the electrical characteristicsof the transistor. This means that miniaturization of a transistor islikely to decrease in the yield of an integrated circuit.

Thus, one object of one embodiment of the present invention is toprovide a semiconductor device in which deterioration of electricalcharacteristics which becomes more noticeable as the transistor isminiaturized can be suppressed. Another object is to provide asemiconductor device having a structure with which a decrease in a yielddue to miniaturization can be suppressed. Another object is to provide asemiconductor device having a high degree of integration. Another objectis to provide a semiconductor device in which deterioration of on-statecurrent characteristics is reduced. Another object is to provide asemiconductor device with low power consumption. Another object is toprovide a semiconductor device with high reliability. Another object isto provide a semiconductor device which can retain data even when powersupply is stopped. Another object is to provide a novel semiconductordevice.

Note that the descriptions of these objects do not disturb the existenceof other objects. Note that in one embodiment of the present invention,there is no need to achieve all the objects. Other objects are apparentfrom and can be derived from the description of the specification, thedrawings, the claims, and the like.

One embodiment of the present invention relates to a semiconductordevice having a stack including oxide semiconductor layers.

One embodiment of the present invention is a semiconductor deviceincluding, over an insulating surface, a stack in which a first oxidesemiconductor layer and a second oxide semiconductor layer aresequentially formed, and a third oxide semiconductor layer. The thirdoxide semiconductor layer covers part of a first side surface, part of atop surface, and part of a second side surface opposite to the firstside surface of the stack. The third oxide semiconductor layer includesa first layer in contact with the stack, and a second layer over thefirst layer. The first layer includes a microcrystalline layer, and thesecond layer includes a crystalline layer in which c-axes are aligned ina direction perpendicular to a surface of the first layer.

Another embodiment of the present invention is a semiconductor deviceincluding, over an insulating surface, a stack in which a first oxidesemiconductor layer and a second oxide semiconductor layer aresequentially formed; a source electrode layer and a drain electrodelayer each partly in contact with the stack; a third oxide semiconductorlayer partly in contact with each of the insulating surface, the stack,the source electrode layer, and the drain electrode layer; a gateinsulating film over the third oxide semiconductor layer; a gateelectrode layer over the gate insulating film; and an insulating layerover the source electrode layer, the drain electrode layer, and the gateelectrode layer. The third oxide semiconductor layer includes a firstlayer in contact with the stack, and a second layer over the firstlayer. The first layer includes a microcrystalline layer, and the secondlayer includes a crystalline layer in which c-axes are aligned in adirection perpendicular to a surface of the first layer.

Note that in this specification and the like, ordinal numbers such as“first” and “second” are used in order to avoid confusion amongcomponents and do not limit the components numerically.

The first oxide semiconductor layer preferably includes a crystallinelayer in which c-axes are aligned in a direction perpendicular to theinsulating surface. The second oxide semiconductor layer preferablyincludes a crystalline layer in which c-axes are aligned in a directionperpendicular to a top surface of the first oxide semiconductor layer.

Further, a surface of the second oxide semiconductor layer is preferablycurved in a region where the stack is in contact with the third oxidesemiconductor layer.

Further, a conduction band minimum of the first oxide semiconductorlayer and a conduction band minimum of the third oxide semiconductorlayer are preferably closer to a vacuum level than a conduction bandminimum of the second oxide semiconductor layer by 0.05 eV or more and 2eV or less.

It is preferable that the first to third oxide semiconductor layers eachinclude an In-M-Zn oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, or Hf),and that an atomic ratio of M with respect to In in each of the firstand third oxide semiconductor layers be higher than an atomic ratio of Mwith respect to In in the second oxide semiconductor layer.

According to one embodiment of the present invention, any of thefollowing effects can be achieved: to provide a semiconductor device inwhich deterioration of electrical characteristics which becomes morenoticeable as the semiconductor device is miniaturized can besuppressed, to provide a semiconductor device that can be miniaturizedin a simple process, to provide a semiconductor device having astructure with which a decrease in a yield due to miniaturization can besuppressed, to provide a semiconductor device having a high degree ofintegration, to provide a semiconductor device in which deterioration ofon-state current characteristics is reduced, to provide a semiconductordevice with low power consumption, to provide a semiconductor devicewith high reliability, to provide a semiconductor device which canretain data even when power supply is stopped, and to provide a novelsemiconductor device.

Note that the descriptions of these effects do not disturb the existenceof other effects. In one embodiment of the present invention, there isno need to obtain all the effects. Other effects are apparent from andcan be derived from the description of the specification, the drawings,the claims, and the like.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are a top view and cross-sectional views of a transistor.

FIG. 2 is a cross-sectional view of a transistor.

FIG. 3 illustrates a band structure of oxide semiconductor layers.

FIGS. 4A and 4B each illustrate a crystal structure of part of a stackincluding oxide semiconductor layers.

FIG. 5 is an enlarged cross-sectional view of a transistor.

FIG. 6 is a cross-sectional view of a transistor.

FIGS. 7A to 7C illustrate a method for manufacturing a transistor.

FIGS. 8A to 8C illustrate a method for manufacturing a transistor.

FIGS. 9A and 9B are a cross-sectional view and a circuit diagram of asemiconductor device.

FIG. 10 is a circuit diagram of a semiconductor device.

FIGS. 11A and 11B are each a circuit diagram of a semiconductor deviceand

FIGS. 11C and 11D are each a cross-sectional view of a semiconductordevice.

FIG. 12 is a circuit diagram of a semiconductor device.

FIGS. 13A to 13C illustrate electronic devices in which semiconductordevices can be used.

FIG. 14 is a cross-sectional view of a sample for observing a stackedstructure of oxide semiconductor layers.

FIGS. 15A and 15B are each a cross-sectional TEM photograph of oxidesemiconductor layers.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments are described in detail with reference to the drawings. Notethat the present invention is not limited to the following descriptionand it is readily appreciated by those skilled in the art that modes anddetails can be modified in various ways without departing from thespirit and the scope of the present invention. Therefore, the presentinvention should not be limited to the descriptions of the embodimentsbelow. Note that in structures of the present invention described below,the same portions or portions having similar functions are denoted bythe same reference numerals in different drawings, and descriptionthereof is omitted in some cases.

Note that in this specification and the like, when it is explicitlydescribed that X and Y are connected, the case where X and Y areelectrically connected, the case where X and Y are functionallyconnected, and the case where X and Y are directly connected areincluded therein. Here, each of X and Y denotes an object (e.g., adevice, an element, a circuit, a wiring, an electrode, a terminal, aconductive film, a layer, or the like). Accordingly, a connectionrelation other than connection relations shown in the drawings and textsis also included, without being limited to a predetermined connectionrelation, for example, a connection relation shown in the drawings andtexts.

In the case where X and Y are electrically connected, one or moreelements (e.g., a switch, a transistor, a capacitor, an inductor, aresistor, a diode, a display element, a light-emitting element, and aload) that enable an electrical connection between X and Y can beconnected between X and Y, for example. Note that the switch iscontrolled to be turned on or off. That is, the switch has a function ofdetermining whether current flows or not by being turned on or off(becoming an on state and an off state). Alternatively, the switch has afunction of selecting and changing a current path.

In the case where X and Y are functionally connected, one or morecircuits (e.g., a logic circuit such as an inverter, a NAND circuit, ora NOR circuit; a signal converter circuit such as a DA convertercircuit, an AD converter circuit, or a gamma correction circuit; apotential level converter circuit such as a power supply circuit (e.g.,a step-up circuit or a step-down circuit) or a level shifter circuit forchanging the potential level of a signal; a voltage source; a currentsource; a switching circuit; an amplifier circuit such as a circuit thatcan increase signal amplitude, the amount of current, or the like, anoperational amplifier, a differential amplifier circuit, a sourcefollower circuit, or a buffer circuit; a signal generation circuit; astorage circuit; and a control circuit) that enable a functionalconnection between X and Y can be connected between X and Y, forexample. Note that for example, in the case where a signal output from Xis transmitted to Y even when another circuit is interposed between Xand Y, X and Y are functionally connected.

Note that when it is explicitly described that X and Y are connected,the case where X and Y are electrically connected (i.e., the case whereX and Y are connected with another element or another circuit providedtherebetween), the case where X and Y are functionally connected (i.e.,the case where X and Y are functionally connected with another circuitprovided therebetween), and the case where X and Y are directlyconnected (i.e., the case where X and Y are connected without anotherelement or another circuit provided therebetween) are included therein.That is, when it is explicitly described that “X and Y are electricallyconnected”, the description is the same as the case where it isexplicitly only described that “X and Y are connected”.

Even when independent components are electrically connected to eachother in a circuit diagram, one component has functions of a pluralityof components in some cases. For example, when part of a wiring alsofunctions as an electrode, one conductive film functions as the wiringand the electrode. Thus, an “electrical connection” in thisspecification includes in its category such a case where one conductivefilm has functions of a plurality of components.

Note that, for example, the case where a source (or a first terminal orthe like) of a transistor is electrically connected to X through (or notthrough) Z1 and a drain (or a second terminal or the like) of thetransistor is electrically connected to Y through (or not through) Z2,or the case where a source (or a first terminal or the like) of atransistor is directly connected to one part of Z1 and another part ofZ1 is directly connected to X while a drain (or a second terminal or thelike) of the transistor is directly connected to one part of Z2 andanother part of Z2 is directly connected to Y, can be expressed by usingany of the following expressions.

The expressions include, for example, “X, Y, a source (or a firstterminal or the like) of a transistor, and a drain (or a second terminalor the like) of the transistor are electrically connected to each other,and X, the source (or the first terminal or the like) of the transistor,the drain (or the second terminal or the like) of the transistor, and Yare electrically connected to each other in this order”, “a source (or afirst terminal or the like) of a transistor is electrically connected toX, a drain (or a second terminal or the like) of the transistor iselectrically connected to Y, and X, the source (or the first terminal orthe like) of the transistor, the drain (or the second terminal or thelike) of the transistor, and Y are electrically connected to each otherin this order”, and “X is electrically connected to Y through a source(or a first terminal or the like) and a drain (or a second terminal orthe like) of a transistor, and X, the source (or the first terminal orthe like) of the transistor, the drain (or the second terminal or thelike) of the transistor, and Y are provided to be connected in thisorder”. When the connection order in a circuit configuration is definedby an expression similar to the above examples, a source (or a firstterminal or the like) and a drain (or a second terminal or the like) ofa transistor can be distinguished from each other to specify thetechnical scope. Note that these expressions are examples and there isno limitation on the expressions. Here, each of X, Y, Z1, and Z2 denotesan object (e.g., a device, an element, a circuit, a wiring, anelectrode, a terminal, a conductive film, a layer, or the like).

Note that in this specification and the like, a transistor can be formedusing any of a variety of substrates. The type of a substrate is notlimited to a certain type. Examples of the substrate include asemiconductor substrate (e.g., a single crystal substrate or a siliconsubstrate), an SOI substrate, a glass substrate, a quartz substrate, aplastic substrate, a metal substrate, a stainless steel substrate, asubstrate including stainless steel foil, a tungsten substrate, asubstrate including tungsten foil, a flexible substrate, an attachmentfilm, paper including a fibrous material, and a base material film.Examples of a glass substrate include a barium borosilicate glasssubstrate, an aluminoborosilicate glass substrate, and a soda lime glasssubstrate. For a flexible substrate, a flexible synthetic resin such asplastics typified by polyethylene terephthalate (PET), polyethylenenaphthalate (PEN), and polyether sulfone (PES), or acrylic can be used,for example. Examples of an attachment film include attachment filmsformed using polypropylene, polyester, polyvinyl fluoride, polyvinylchloride, and the like. Examples of a base film include a polyester basefilm, a polyamide base film, a polyimide base film, an inorganic vapordeposition film, paper, and the like. Specifically, when a transistor isformed using a semiconductor substrate, a single crystal substrate, anSOI substrate, or the like, a transistor with few variations incharacteristics, size, shape, or the like, high current supplycapability, and a small size can be formed. By forming a circuit usingsuch a transistor, power consumption of the circuit can be reduced orthe circuit can be highly integrated.

Alternatively, a flexible substrate may be used as the substrate, andthe transistor may be provided directly on the flexible substrate.Further alternatively, a separation layer may be provided between thesubstrate and the transistor. The separation layer can be used when partor the whole of a semiconductor device formed over the separation layeris separated from the substrate and transferred onto another substrate.In such a case, the transistor can be transferred to a substrate havinglow heat resistance or a flexible substrate as well. For the aboveseparation layer, a stack including inorganic films, which are atungsten film and a silicon oxide film, or an organic resin film ofpolyimide or the like formed over a substrate can be used, for example.

In other words, a transistor may be formed using one substrate, and thentransferred to another substrate. Examples of a substrate to which atransistor is transferred include, in addition to the above-describedsubstrates over which transistors can be formed, a paper substrate, acellophane substrate, an aramid film substrate, a polyimide filmsubstrate, a stone substrate, a wood substrate, a cloth substrate(including a natural fiber (e.g., silk, cotton, or hemp), a syntheticfiber (e.g., nylon, polyurethane, or polyester), a regenerated fiber(e.g., acetate, cupra, rayon, or regenerated polyester), or the like), aleather substrate, a rubber substrate, and the like. With the use ofsuch a substrate, a transistor with excellent properties, a transistorwith low power consumption, or a device with high durability can beformed, high heat resistance can be provided, or a reduction in weightor thinning can be achieved.

Embodiment 1

In this embodiment, a semiconductor device of one embodiment of thepresent invention is described with reference to drawings.

FIGS. 1A to 1C are a top view and cross-sectional views of a transistorof one embodiment of the present invention. FIG. 1A is the top view.FIG. 1B illustrates a cross section taken along dashed-dotted line A1-A2in FIG. 1A. FIG. 1C is a cross-sectional view taken along dashed-dottedline A3-A4 in FIG. 1A. Note that for simplification of the drawing, somecomponents are not illustrated in the top view in FIG. 1A. In somecases, the direction of the dashed-dotted line A1-A2 is referred to as achannel length direction, and the direction of the dashed-dotted lineA3-A4 is referred to as a channel width direction.

A transistor 100 illustrated in FIGS. 1A to 1C and FIG. 2 includes abase insulating film 120 formed over a substrate 110; a stack in which afirst oxide semiconductor layer 131 and a second oxide semiconductorlayer 132 are provided in this order and which is formed over the baseinsulating film; a source electrode layer 140 and a drain electrodelayer 150, each in contact with part of the stack; a third oxidesemiconductor layer 133 which is in contact with part of each of thebase insulating film 120, the stack, the source electrode layer 140, andthe drain electrode layer 150; a gate insulating film 160 formed overthe third oxide semiconductor layer; a gate electrode layer 170 formedover the gate insulating film; and an insulating layer 180 formed overthe source electrode layer 140, the drain electrode layer 150, and thegate electrode layer 170.

Here, the first oxide semiconductor layer 131 preferably includes acrystalline layer in which c-axes are aligned in a directionperpendicular to a surface of the base insulating film 120. The secondoxide semiconductor layer 132 preferably includes a crystalline layer inwhich c-axes are aligned in a direction perpendicular to a top surfaceof the first oxide semiconductor layer 131.

Further, the third oxide semiconductor layer 133 is formed to have afirst layer in contact with the stack and a second layer over the firstlayer. The first layer includes a microcrystalline layer, and the secondlayer includes a crystalline layer in which c-axes are aligned in adirection perpendicular to a surface of the first layer.

Further, an insulating layer 185 formed using an oxide may be formedover the insulating layer 180. The insulating layer 185 may be providedas needed and another insulating layer may be further providedthereover. The first oxide semiconductor layer 131, the second oxidesemiconductor layer 132, and the third oxide semiconductor layer 133 arecollectively referred to as an oxide semiconductor layer 130.

Note that functions of a “source” and a “drain” of a transistor aresometimes replaced with each other when a transistor of oppositepolarity is used or when the direction of current flowing is changed incircuit operation, for example. Thus, the terms “source” and “drain” canbe used to denote the drain and the source, respectively, in thisspecification.

In addition, in the source electrode layer 140 or the drain electrodelayer 150 overlapping with the oxide semiconductor layers (the firstoxide semiconductor layer 131 and the second oxide semiconductor layer132) of the transistor of one embodiment of the present invention, thedistance (ΔW) between one edge portion of the oxide semiconductor layerand one edge portion of the source electrode layer 140 or the drainelectrode layer 150, which is shown in the top view of FIG. 1A, is setshorter than or equal to 50 nm, preferably shorter than or equal to 25nm. When ΔW is set small, oxygen contained in the base insulating film120 can be prevented from being diffused to a metal material, which isthe component of the source electrode layer 140 and the drain electrodelayer 150. Thus, unnecessary release of oxygen, in particular, excessoxygen, contained in the base insulating film 120, can be prevented. Asa result, oxygen can be efficiently supplied from the base insulatingfilm 120 to the oxide semiconductor layer.

Then, the components of the transistor 100 of one embodiment of thepresent invention will be described in detail.

The substrate 110 is not limited to a simple supporting substrate, andmay be a substrate where another device such as a transistor is formed.In that case, at least one of the gate electrode layer 170, the sourceelectrode layer 140, and the drain electrode layer 150 of the transistor100 may be electrically connected to the above device.

The base insulating film 120 can have a function of supplying oxygen tothe oxide semiconductor layer 130 as well as a function of preventingdiffusion of impurities from the substrate 110. For this reason, thebase insulating film 120 is preferably an insulating film containingoxygen and further preferably, the base insulating film 120 is aninsulating film containing oxygen in which the oxygen content is higherthan that in the stoichiometric composition. In the case where thesubstrate 110 is provided with another device as described above, thebase insulating film 120 also has a function as an interlayer insulatingfilm. In that case, the base insulating film 120 is preferably subjectedto planarization treatment such as chemical mechanical polishing (CMP)treatment so as to have a flat surface.

Further, in a region where a channel of the transistor 100 is formed,the oxide semiconductor layer 130 has a structure in which the firstoxide semiconductor layer 131, the second oxide semiconductor layer 132,and the third oxide semiconductor layer 133 are stacked in this orderfrom the substrate 110 side. In addition, as illustrated in thecross-sectional view in a channel width direction in FIG. 1C, in thechannel formation region, the third oxide semiconductor layer 133 isformed to cover a side surface, the top surface, and the opposite sidesurface of the stack including the first oxide semiconductor layer 131and the second oxide semiconductor layer 132. This means that, in thechannel formation region, the second oxide semiconductor layer 132 issurrounded by the first oxide semiconductor layer 131 and the thirdoxide semiconductor layer 133.

Here, for the second oxide semiconductor layer 132, for example, anoxide semiconductor whose electron affinity (an energy differencebetween a vacuum level and the conduction band minimum) is higher thanthose of the first oxide semiconductor layer 131 and the third oxidesemiconductor layer 133 is used. The electron affinity can be obtainedby subtracting an energy difference between the conduction band minimumand the valence band maximum (what is called an energy gap) from anenergy difference between the vacuum level and the valence band maximum(what is called an ionization potential).

The first oxide semiconductor layer 131 and the third oxidesemiconductor layer 133 each contain one or more kinds of metal elementsforming the second oxide semiconductor layer 132. For example, the firstoxide semiconductor layer 131 and the third oxide semiconductor layer133 are preferably formed using an oxide semiconductor whose conductionband minimum is closer to a vacuum level than that of the second oxidesemiconductor layer 132 is. Further, the energy difference of theconduction band minimum between the second oxide semiconductor layer 132and the first oxide semiconductor layer 131 and the energy difference ofthe conduction band minimum between the second oxide semiconductor layer132 and the third oxide semiconductor layer 133 are each preferablygreater than or equal to 0.05 eV, 0.07 eV, 0.1 eV, or 0.15 eV andsmaller than or equal to 2 eV, 1 eV, 0.5 eV, or 0.4 eV.

In such a structure, when an electric field is applied to the gateelectrode layer 170, a channel is formed in the second oxidesemiconductor layer 132 whose conduction band minimum is the lowest inthe oxide semiconductor layer 130. In other words, the third oxidesemiconductor layer 133 is formed between the second oxide semiconductorlayer 132 and the gate insulating film 160, whereby a structure in whichthe channel of the transistor is not in contact with the gate insulatingfilm is obtained.

Further, since the first oxide semiconductor layer 131 contains one ormore metal elements contained in the second oxide semiconductor layer132, an interface state is less likely to be formed at the interface ofthe second oxide semiconductor layer 132 with the first oxidesemiconductor layer 131 than at the interface with the base insulatingfilm 120 on the assumption that the second oxide semiconductor layer 132is in contact with the base insulating film 120. The interface statesometimes forms a channel, leading to a change in the threshold voltageof the transistor. Thus, with the first oxide semiconductor layer 131,variations in the electrical characteristics of the transistor, such asa threshold voltage, can be reduced. Further, the reliability of thetransistor can be improved.

Furthermore, since the third oxide semiconductor layer 133 contains oneor more metal elements contained in the second oxide semiconductor layer132, scattering of carriers is less likely to occur at the interface ofthe second oxide semiconductor layer 132 with the third oxidesemiconductor layer 133 than at the interface with the gate insulatingfilm 160 on the assumption that the second oxide semiconductor layer 132is in contact with the gate insulating film 160. Thus, with the thirdoxide semiconductor layer 133, the field-effect mobility of thetransistor can be increased.

When each of the first oxide semiconductor layer 131, the second oxidesemiconductor layer 132, and the third oxide semiconductor layer 133 isan In-M-Zn oxide layer containing at least indium, zinc, and M (M is ametal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf), the atomicratio of M to In or Zn in the first oxide semiconductor layer 131 andthe third oxide semiconductor layer 133 is preferably higher than thatin the second oxide semiconductor layer 132. Specifically, the atomicratio of M to In or Zn in the first oxide semiconductor layer 131 andthe third oxide semiconductor layer 133 is 1.5 times or more, preferably2 times or more, further preferably 3 times or more as much as that inthe second oxide semiconductor layer 132. The metal M is more stronglybonded to oxygen than In or Zn is and thus has a function of suppressinggeneration of an oxygen vacancy in an oxide semiconductor layer. Thatis, an oxygen vacancy is less likely to be generated in the first oxidesemiconductor layer 131 and the third oxide semiconductor layer 133 thanin the second oxide semiconductor layer 132.

Note that when each of the first oxide semiconductor layer 131, thesecond oxide semiconductor layer 132, and the third oxide semiconductorlayer 133 is an In-M-Zn oxide layer containing at least indium, zinc,and M (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf),and the first oxide semiconductor layer 131 has an atomic ratio of In toM and Zn which is x₁:y₁:z₁, the second oxide semiconductor layer 132 hasan atomic ratio of In to M and Zn which is x₂:y₂:z₂, and the third oxidesemiconductor layer 133 has an atomic ratio of In to M and Zn which isx₃:y₃:z₃, each of y₁/x₁ and y₃/x₃ is preferably larger than y₂/x₂. Eachof y₁/x₁ and y₃/x₃ is 1.5 times or more, preferably 2 times or more,further preferably 3 times or more as large as y₂/x₂. At this time, wheny₂ is greater than or equal to x₂ in the second oxide semiconductorlayer 132, the transistor can have stable electrical characteristics.However, when y₂ is 3 times or more as large as x₂, the field-effectmobility of the transistor is reduced; accordingly, y₂ is preferablyless than 3 times x₂.

Note that in this specification, an atomic ratio used for describing thecomposition of an oxide semiconductor layer can be also used as theatomic ratio of a base material. In the case where an oxidesemiconductor layer is deposited by a sputtering method using an oxidesemiconductor material as a target, the composition of the oxidesemiconductor layer might be different from that of the target, which isa base material, depending on the kind or a ratio of a sputtering gas,the density of the target, or deposition conditions. Thus, in thisspecification, an atomic ratio used for describing the composition of anoxide semiconductor layer is also used as the atomic ratio of a basematerial. For example, in the case where a sputtering method is used fordeposition, an In—Ga—Zn oxide film whose atomic ratio of In to Ga and Znis 1:1:1 can be also understood as an In—Ga—Zn oxide film formed usingan In—Ga—Zn oxide material whose atomic ratio of In to Ga and Zn is1:1:1 as a target.

Further, in the case where Zn and O are not taken into consideration,the proportion of In and the proportion of M in each of the first oxidesemiconductor layer 131 and the third oxide semiconductor layer 133 arepreferably less than 50 atomic % and greater than or equal to 50 atomic%, respectively, and further preferably less than 25 atomic % andgreater than or equal to 75 atomic %, respectively. In addition, in thecase where Zn and O are not taken into consideration, the proportion ofIn and the proportion of M in the second oxide semiconductor layer 132are preferably greater than or equal to 25 atomic % and less than 75atomic %, respectively, and further preferably greater than or equal to34 atomic % and less than 66 atomic %, respectively.

The thicknesses of the first oxide semiconductor layer 131 and the thirdoxide semiconductor layer 133 are each greater than or equal to 1 nm andless than or equal to 100 nm, preferably greater than or equal to 3 nmand less than or equal to 50 nm. The thickness of the second oxidesemiconductor layer 132 is greater than or equal to 1 nm and less thanor equal to 200 nm, preferably greater than or equal to 3 nm and lessthan or equal to 100 nm, further preferably greater than or equal to 3nm and less than or equal to 50 nm.

For the first oxide semiconductor layer 131, the second oxidesemiconductor layer 132, and the third oxide semiconductor layer 133, anoxide semiconductor containing indium, zinc, and gallium can be used,for example. Note that the second oxide semiconductor layer 132preferably contains indium because carrier mobility can be increased.

Accordingly, with the oxide semiconductor layer 130 having astacked-layer structure including the first oxide semiconductor layer131, the second oxide semiconductor layer 132, and the third oxidesemiconductor layer 133, a channel can be formed in the second oxidesemiconductor layer 132; thus, the transistor can have a highfield-effect mobility and stable electrical characteristics.

In a band structure, the conduction band minimums of the first oxidesemiconductor layer 131, the second oxide semiconductor layer 132, andthe third oxide semiconductor layer 133 are continuous. This can beunderstood also from the fact that the compositions of the first oxidesemiconductor layer 131, the second oxide semiconductor layer 132, andthe third oxide semiconductor layer 133 are close to one another andoxygen is easily diffused among the first oxide semiconductor layer 131,the second oxide semiconductor layer 132, and the third oxidesemiconductor layer 133. Thus, the first oxide semiconductor layer 131,the second oxide semiconductor layer 132, and the third oxidesemiconductor layer 133 have a continuous physical property althoughthey have different compositions and form a stack. In the drawings,interfaces between the oxide semiconductor layers of the stack areindicated by dotted lines.

The oxide semiconductor layer 130 in which layers containing the samemain components are stacked is formed to have not only a simplestacked-layer structure of the layers but also a continuous energy band(here, in particular, a well structure having a U shape in which theconduction band minimums are continuous). In other words, thestacked-layer structure is formed such that there exists no impuritythat forms a defect level such as a trap center or a recombinationcenter at each interface. If impurities exist between the stacked oxidesemiconductor layers, the continuity of the energy band is lost andcarriers disappear by a trap or recombination at the interface.

An In—Ga—Zn oxide whose atomic ratio of In to Ga and Zn is 1:3:2, 1:3:3,1:3:4, 1:3:6, 1:6:4, or 1:9:6 can be used for the first oxidesemiconductor layer 131 and the third oxide semiconductor layer 133 andan In—Ga—Zn oxide whose atomic ratio of In to Ga and Zn is 1:1:1, 5:5:6,3:1:2, or the like can be used for the second oxide semiconductor layer132, for example.

The second oxide semiconductor layer 132 of the oxide semiconductorlayer 130 serves as a well, so that a channel is formed in the secondoxide semiconductor layer 132 in a transistor including the oxidesemiconductor layer 130. Note that since the conduction band minimumsare continuous, the oxide semiconductor layer 130 can also be referredto as a U-shaped well. Further, a channel formed to have such astructure can also be referred to as a buried channel.

Note that trap levels due to impurities or defects might be formed inthe vicinity of the interface between an insulating film such as asilicon oxide film and each of the first oxide semiconductor layer 131and the third oxide semiconductor layer 133. The second oxidesemiconductor layer 132 can be distanced away from the trap levels owingto existence of the first oxide semiconductor layer 131 and the thirdoxide semiconductor layer 133.

However, when the energy differences between the conduction band minimumof the second oxide semiconductor layer 132 and the conduction bandminimum of each of the first oxide semiconductor layer 131 and the thirdoxide semiconductor layer 133 are small, an electron in the second oxidesemiconductor layer 132 might reach the trap level by passing over theenergy differences. When the electron is trapped in the trap level, anegative fixed charge is generated at the interface with the insulatingfilm, whereby the threshold voltage of the transistor is shifted in thepositive direction.

Thus, to reduce fluctuations in the threshold voltage of the transistor,energy differences of at least certain values between the conductionband minimum of the second oxide semiconductor layer 132 and theconduction band minimum of each of the first oxide semiconductor layer131 and the third oxide semiconductor layer 133 are necessary. Each ofthe energy differences is preferably greater than or equal to 0.1 eV,further preferably greater than or equal to 0.15 eV.

Note that each of the first oxide semiconductor layer 131, the secondoxide semiconductor layer 132, and the third oxide semiconductor layer133 preferably includes a crystalline layer in which c-axes are aligned.A film containing the crystalline layer can provide a transistor withstable electrical characteristics.

In the case where an In—Ga—Zn oxide is used for the oxide semiconductorlayer 130, it is preferable that the third oxide semiconductor layer 133contain less In than the second oxide semiconductor layer 132 so thatdiffusion of In to the gate insulating film is prevented.

The above-described buried channel is formed in the transistor of oneembodiment of the present invention. In addition, as in the transistorillustrated in FIG. 2, the third oxide semiconductor layer 133 includesa microcrystalline layer 133 a in contact with the base insulating film120 and the stack including the first oxide semiconductor layer 131 andthe second oxide semiconductor layer 132, and a crystalline layer 133 bin which c-axes are aligned in a direction perpendicular to a surface ofthe microcrystalline layer.

FIG. 3 illustrates the details of the band structure of the oxidesemiconductor layers (in the B1-B2 direction in FIG. 2) having such astructure. Here, Evac represents energy of the vacuum level, EcI1 andEcI2 each represent the conduction band minimum of the silicon oxidefilm, EcS1 represents the conduction band minimum of the first oxidesemiconductor layer 131, EcS2 represents the conduction band minimum ofthe second oxide semiconductor layer 132, and EcS3 represents theconduction band minimum of the third oxide semiconductor layer 133.

Energy does not change suddenly between EcS1 and EcS2 and between EcS3and EcS2, and gradually starts and stops changing.

This is because the constituents of the oxide semiconductor layers arediffused interactively between the first oxide semiconductor layer 131and the second oxide semiconductor layer 132 and between the third oxidesemiconductor layer 133 and the second oxide semiconductor layer 132,which leads to formation of a region whose composition is intermediatebetween the compositions of the first oxide semiconductor layer 131 andthe second oxide semiconductor layer 132 or a region whose compositionis intermediate between the compositions of the third oxidesemiconductor layer 133 and the second oxide semiconductor layer 132.

Thus, as illustrated in FIG. 3, a channel formed in the second oxidesemiconductor layer 132 is formed in a region 132 b which is positionedat an inner side than the interface between the third oxidesemiconductor layer 133 and the second oxide semiconductor layer 132 andthe interface between the first oxide semiconductor layer 131 and thesecond oxide semiconductor layer 132. With such a structure, a carriercan be prevented from being trapped or recombined even when a defect oran impurity exists at either one of the interfaces.

In the third oxide semiconductor layer 133, a region in contact with astack including the first oxide semiconductor layer 131 and the secondoxide semiconductor layer 132 includes the microcrystalline layer 133 a.The density of the microcrystalline layer is lower than that of thecrystalline layer 133 b, which is formed over the microcrystallinelayer; thus, the constituents of the second oxide semiconductor layer132 are easily diffused to the third oxide semiconductor layer 133 side.As a result, the region whose composition is intermediate between thecompositions of the third oxide semiconductor layer 133 and the secondoxide semiconductor layer 132 becomes large. Thus, the channel formed inthe second oxide semiconductor layer 132 is positioned further apartfrom the interface between the third oxide semiconductor layer 133 andthe second oxide semiconductor layer 132 toward the center of the secondoxide semiconductor layer 132, and a malfunction which occurs when adefect or an impurity exists at the interface can be avoided moreeffectively.

In the case where the first oxide semiconductor layer 131 and the secondoxide semiconductor layer 132 each include a crystalline layer in whichc-axes are aligned, oxygen is relatively likely to be diffused since thedensity of the microcrystalline layer 133 a is lower than that of thecrystalline layer. Accordingly, oxygen can be efficiently supplied fromthe base insulating film 120 to the second oxide semiconductor layer 132to be a channel with the use of the microcrystalline layer 133 a as apath, and an oxygen vacancy can be filled with oxygen.

Further, in the crystalline layer 133 b in the third oxide semiconductorlayer 133, c-axes are aligned in the direction perpendicular to thesurface of the microcrystalline layer 133 a. Thus, when the second oxidesemiconductor layer 132 is formed to have a curved surface, a channelregion in the second oxide semiconductor layer 132 can be denselycovered by crystals whose c-axes are aligned.

FIG. 4A is a cross-sectional view in the channel width direction of thetransistor, which schematically illustrates part of a crystal structureof a stack including the second oxide semiconductor layer 132 formed tohave a curved surface, the microcrystalline layer 133 a covering thesecond oxide semiconductor layer, and the crystalline layer 133 b formedover the microcrystalline layer. Here, the second oxide semiconductorlayer 132 is a crystalline layer in which c-axes are aligned in adirection perpendicular to a surface of the first oxide semiconductorlayer 131 (not illustrated).

When the second oxide semiconductor layer 132 is formed to have a curvedsurface as illustrated in FIG. 4A, the third oxide semiconductor layer133 can be formed to have the dense crystalline layer 133 b in whichc-axes are aligned in the direction perpendicular to the curved surface,with the microcrystalline layer 133 a is provided between the secondoxide semiconductor layer 132 and the dense crystalline layer 133 b.Such a structure can improve an effect of suppressing release of oxygenfrom the second oxide semiconductor layer 132 or an effect of confiningoxygen released from the base insulating film 120 by the third oxidesemiconductor layer 133; thus, an oxygen vacancy in the second oxidesemiconductor layer 132 can be efficiently filled with oxygen.

Note that in the case where the second oxide semiconductor layer 132 isformed not to have a curved surface as illustrated in FIG. 4B, a region233 in which crystals are sparse is formed at an intersection of thecrystalline layer 133 b formed over the top surface of the second oxidesemiconductor layer 132 and the crystalline layer 133 b that is formedto face a side surface of the second oxide semiconductor layer 132, inthe third oxide semiconductor layer 133. Thus, oxygen contained in thesecond oxide semiconductor layer 132 and oxygen supplied from the baseinsulating film 120 to the second oxide semiconductor layer 132 arelikely to be released through the region 233, in which case an oxygenvacancy in the second oxide semiconductor layer 132 cannot beefficiently filled with oxygen.

Note that stable electrical characteristics can be effectively impartedto a transistor in which an oxide semiconductor layer serves as achannel by reducing the concentration of impurities in the oxidesemiconductor layer to make the oxide semiconductor layer intrinsic orsubstantially intrinsic. The term “substantially intrinsic” refers tothe state where an oxide semiconductor layer has a carrier density lowerthan 1×10¹⁷/cm³, preferably lower than 1×10¹⁵/cm³, further preferablylower than 1×10¹³/cm³.

Further, in the oxide semiconductor layer, hydrogen, nitrogen, carbon,silicon, and a metal element other than main components are impurities.For example, hydrogen and nitrogen form donor levels to increase thecarrier density, and silicon forms impurity levels in the oxidesemiconductor layer. The impurity levels serve as traps and might causethe electrical characteristics of the transistor to deteriorate. Thus,it is preferable to reduce the concentration of the impurities in thefirst oxide semiconductor layer 131, the second oxide semiconductorlayer 132, and the third oxide semiconductor layer 133, and atinterfaces between the layers.

In order to make the oxide semiconductor layer intrinsic orsubstantially intrinsic, in SIMS (secondary ion mass spectrometry), forexample, the concentration of silicon at a certain depth of the oxidesemiconductor layer or in a region of the oxide semiconductor layer ispreferably lower than 1×10¹⁹ atoms/cm³, further preferably lower than5×10¹⁸ atoms/cm³, still further preferably lower than 1×10¹⁸ atoms/cm³.Further, the concentration of hydrogen at a certain depth of the oxidesemiconductor layer or in a region of the oxide semiconductor layer ispreferably lower than or equal to 2×10²⁰ atoms/cm³, further preferablylower than or equal to 5×10¹⁹ atoms/cm³, still further preferably lowerthan or equal to 1×10¹⁹ atoms/cm³, yet still further preferably lowerthan or equal to 5×10¹⁸ atoms/cm³. Further, the concentration ofnitrogen at a certain depth of the oxide semiconductor layer or in aregion of the oxide semiconductor layer is preferably lower than 5×10¹⁹atoms/cm³, further preferably lower than or equal to 5×10¹⁸ atoms/cm³,still further preferably lower than or equal to 1×10¹⁸ atoms/cm³, yetstill further preferably lower than or equal to 5×10¹⁷ atoms/cm³.

In the case where the oxide semiconductor layer includes crystals, highconcentration of silicon or carbon might reduce the crystallinity of theoxide semiconductor layer. In order not to reduce the crystallinity ofthe oxide semiconductor layer, for example, the concentration of siliconat a certain depth of the oxide semiconductor layer or in a region ofthe oxide semiconductor layer may be lower than 1×10¹⁹ atoms/cm³,preferably lower than 5×10¹⁸ atoms/cm³, further preferably lower than1×10¹⁸ atoms/cm³. Further, the concentration of carbon at a certaindepth of the oxide semiconductor layer or in a region of the oxidesemiconductor layer may be lower than 1×10¹⁹ atoms/cm³, preferably lowerthan 5×10¹⁸ atoms/cm³, further preferably lower than 1×10¹⁸ atoms/cm³,for example.

A transistor in which the above-described highly purified oxidesemiconductor layer is used for a channel formation region has anextremely low off-state current. In the case where the voltage between asource and a drain is set to approximately 0.1 V, 5 V, or 10 V, forexample, the off-state current standardized on the channel width of thetransistor can be as low as several yoctoamperes per micrometer toseveral zeptoamperes per micrometer.

Note that as the gate insulating film of the transistor, an insulatingfilm containing silicon is used in many cases; thus, it is preferablethat, as in the transistor of one embodiment of the present invention, aregion of the oxide semiconductor layer, which serves as a channel, benot in contact with the gate insulating film for the above-describedreason. In the case where a channel is formed at the interface betweenthe gate insulating film and the oxide semiconductor layer, scatteringof carriers occurs at the interface, whereby the field-effect mobilityof the transistor is reduced in some cases. Also from the view of theabove, it is preferable that the region of the oxide semiconductorlayer, which serves as a channel, be separated from the gate insulatingfilm.

For the source electrode layer 140 and the drain electrode layer 150, aconductive material which is easily bonded to oxygen is preferably used.For example, Al, Cr, Cu, Ta, Ti, Mo, or W can be used. Among thematerials, in particular, it is preferable to use Ti which is easilybonded to oxygen or to use W with a high melting point, which allowssubsequent process temperatures to be relatively high. Note that theconductive material which is easily bonded to oxygen includes, in itscategory, a material to which oxygen is easily diffused.

When the conductive material which is easily bonded to oxygen is incontact with an oxide semiconductor layer, a phenomenon occurs in whichoxygen in the oxide semiconductor layer is diffused to the conductivematerial which is easily bonded to oxygen. The phenomenon noticeablyoccurs when the temperature is high. Since the manufacturing process ofthe transistor involves a heat treatment step, the above phenomenoncauses generation of oxygen vacancies in the vicinity of a region whichis in the oxide semiconductor layer and is in contact with the sourceelectrode layer or the drain electrode layer. The oxygen vacancies bondto hydrogen slightly contained in the layer, whereby the region ischanged to an n-type region. Thus, the n-type region can serve as asource or a drain of the transistor.

The n-type region is illustrated in an enlarged cross-sectional view ofthe transistor (showing part of a cross section in the channel lengthdirection, which is near the source electrode layer 140) in FIG. 5. Aboundary 135 indicated by a dotted line in the first oxide semiconductorlayer 131 and the second oxide semiconductor layer 132 is a boundarybetween an intrinsic semiconductor region and an n-type semiconductorregion. In the first oxide semiconductor layer 131 and the second oxidesemiconductor layer 132, a region near the source electrode layer 140becomes an n-type region. The boundary 135 is schematically illustratedhere, but actually, the boundary is not clearly seen in some cases.Although FIG. 5 shows that part of the boundary 135 extends in thelateral direction in the second oxide semiconductor layer 132, a regionin the first oxide semiconductor layer 131 and the second oxidesemiconductor layer 132, which is sandwiched between the sourceelectrode layer 140 and the base insulating film 120, becomes n-typeentirely in the thickness direction, in some cases.

In the case of forming a transistor with an extremely short channellength, an n-type region which is formed by the generation of oxygenvacancies might extend in the channel length direction of thetransistor. In that case, the electrical characteristics of thetransistor change; for example, the threshold voltage is shifted, or onand off states of the transistor cannot be controlled with the gatevoltage (in which case the transistor is turned on). Accordingly, when atransistor with an extremely short channel length is formed, it is notalways preferable that a conductive material easily bonded to oxygen beused for a source electrode layer and a drain electrode layer.

In such a case, a conductive material which is less likely to be bondedto oxygen than the above material can be used for the source electrodelayer 140 and the drain electrode layer 150. As the conductive materialwhich is not easily bonded to oxygen, for example, a material containingtantalum nitride, titanium nitride, gold, platinum, palladium, orruthenium or the like can be used. Note that in the case where theconductive material is in contact with the second oxide semiconductorlayer 132, the source electrode layer 140 and the drain electrode layer150 may each have a structure in which the conductive material which isnot easily bonded to oxygen and the above-described conductive materialthat is easily bonded to oxygen are stacked.

The gate insulating film 160 can be formed using an insulating filmcontaining one or more of aluminum oxide, magnesium oxide, siliconoxide, silicon oxynitride, silicon nitride oxide, silicon nitride,gallium oxide, germanium oxide, yttrium oxide, zirconium oxide,lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. Thegate insulating film 160 may be a stack including any of the abovematerials.

For the gate electrode layer 170, a conductive film formed using Al, Ti,Cr, Co, Ni, Cu, Y, Zr, Mo, Ru, Ag, Ta, W, or the like can be used. Thegate electrode layer may be a stack including any of the abovematerials. Alternatively, a conductive film containing nitrogen may beused for the gate electrode layer.

The insulating layer 180 is preferably formed over the gate insulatingfilm 160 and the gate electrode layer 170. The insulating layer ispreferably formed using aluminum oxide. The aluminum oxide film has ahigh blocking effect of preventing penetration of both oxygen andimpurities such as hydrogen and moisture. Accordingly, during and afterthe manufacturing process of the transistor, the aluminum oxide film cansuitably function as a protective film that has effects of preventingentry of impurities such as hydrogen and moisture, which causevariations in the electrical characteristics of the transistor, into theoxide semiconductor layer 130, preventing release of oxygen, which is amain component of the oxide semiconductor layer 130, from the oxidesemiconductor layer, and preventing unnecessary release of oxygen fromthe base insulating film 120. Further, oxygen contained in the aluminumoxide film can be diffused in the oxide semiconductor layer.

Further, the insulating layer 185 is preferably formed over theinsulating layer 180. The insulating layer 185 can be formed using aninsulating film containing one or more of magnesium oxide, siliconoxide, silicon oxynitride, silicon nitride oxide, silicon nitride,gallium oxide, germanium oxide, yttrium oxide, zirconium oxide,lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. Theinsulating layer 185 may be a stack including any of the abovematerials.

Here, the insulating layer 185 preferably contains excess oxygen. Aninsulating layer containing excess oxygen refers to an insulating layerfrom which oxygen can be released by heat treatment or the like. Theinsulating layer containing excess oxygen is, for example, a film inwhich the amount of released oxygen when converted into oxygen atoms is1.0×10¹⁹ atoms/cm³ or more in thermal desorption spectroscopy analysis.In the thermal desorption spectroscopy analysis, heat treatment isperformed at a surface temperature of higher than or equal to 100° C.and lower than or equal to 700° C., preferably higher than or equal to100° C. and lower than or equal to 500° C. Oxygen released from theinsulating layer can be diffused to the channel formation region in theoxide semiconductor layer 130 through the gate insulating film 160, sothat oxygen vacancies formed in the channel formation region can befilled with the oxygen. In this manner, the electrical characteristicsof the transistor can be stable.

High integration of a semiconductor device requires miniaturization of atransistor. However, it is known that miniaturization of a transistorcauses deterioration of the electrical characteristics of thetransistor. In particular, a reduction in on-state current, which isdirectly caused by a decrease in channel width, is significant.

However, in the transistor of one embodiment of the present invention,as described above, the third oxide semiconductor layer 133 is formed soas to cover a region where a channel is formed in the second oxidesemiconductor layer 132, and the channel formation layer and the gateinsulating film are not in contact with each other. Accordingly,scattering of carriers at the interface between the channel formationlayer and the gate insulating film can be reduced and the field-effectmobility of the transistor can be increased.

In addition, the electrical characteristics of the transistor of oneembodiment of the present invention can be particularly improved with astructure as illustrated in a cross-sectional view in the channel widthdirection in FIG. 2, in which the length of the top surface (W_(T)) ofthe second oxide semiconductor layer 132 in the channel width directionis as small as its thickness.

In the case where W_(T) is small as in a transistor illustrated in FIG.2, for example, an electric field from the gate electrode layer 170 tothe side surface of the second oxide semiconductor layer 132 is appliedto the entire second oxide semiconductor layer 132; thus, a channel isformed equally in the side and top surfaces of the second oxidesemiconductor layer 132.

In the case of a transistor in which W_(T) is small, the channel widthcan be defined as the sum of W_(T) and the lengths of the side surfaces(W_(S1) and W_(S2)) of the second oxide semiconductor layer 132 in thechannel width direction (i.e., W_(T)+W_(S1)+W_(S2)), and on-statecurrent flows in the transistor in accordance with the channel width. Inthe case where W_(T) is extremely small, current flows in the entiresecond oxide semiconductor layer 132.

That is, the transistor of one embodiment of the present invention inwhich W_(T) is small can have higher on-state current than theconventional transistor owing to both of an effect of suppressingscattering of carriers and an effect of extending the channel width.

Note that in order to efficiently increase the on-state current of thetransistor when W_(S1) and W_(S2) are represented by W_(S)(W_(S1)=W_(S2)=W_(S)), a relation 0.3W_(S)≤W_(T)≤3W_(S) (W_(T) isgreater than or equal to 0.3W_(S) and less than or equal to 3W_(S)) issatisfied. Further, W_(T)/W_(S) is preferably greater than or equal to0.5 and less than or equal to 1.5, further preferably greater than orequal to 0.7 and less than or equal to 1.3. In the case whereW_(T)/W_(S)>3, the S value and the off-state current might be increased.

As described above, with the transistor of one embodiment of the presentinvention, sufficiently high on-state current can be obtained even whenthe transistor is miniaturized.

In the transistor of one embodiment of the present invention, the secondoxide semiconductor layer 132 is formed over the first oxidesemiconductor layer 131, so that an interface state is less likely to beformed. In addition, impurities do not enter the second oxidesemiconductor layer 132 from above and below because the second oxidesemiconductor layer 132 is an intermediate layer in a three-layerstructure. Since the second oxide semiconductor layer 132 is surroundedby the first oxide semiconductor layer 131 and the third oxidesemiconductor layer 133, not only the on-state current of the transistorcan be increased but the threshold voltage can be stabilized and the Svalue can be reduced. Thus, Icut (current when gate voltage VG is 0 V)can be reduced and power consumption of the semiconductor device can bereduced. Further, the threshold voltage of the transistor becomesstable; thus, long-term reliability of the semiconductor device can beimproved.

The transistor of one embodiment of the present invention may include aconductive film 172 between the oxide semiconductor layer 130 and thesubstrate 110 as illustrated in FIG. 6. When the conductive film is usedas a second gate electrode, the on-state current can be furtherincreased and the threshold voltage can be controlled. In order toincrease the on-state current, for example, the gate electrode layer 170and the conductive film 172 are set to have the same potential, and thetransistor is driven as a dual-gate transistor. Further, to control thethreshold voltage, a fixed potential, which is different from apotential of the gate electrode layer 170, is supplied to the conductivefilm 172.

This embodiment can be combined as appropriate with any of the otherembodiments and an example in this specification.

Embodiment 2

In this embodiment, a method for forming the transistor 100, which isdescribed in Embodiment 1 with reference to FIGS. 1A to 1C, is describedwith reference to FIGS. 7A to 7C and FIGS. 8A to 8C.

For the substrate 110, a glass substrate, a ceramic substrate, a quartzsubstrate, a sapphire substrate, or the like can be used. Alternatively,a single crystal semiconductor substrate or a polycrystallinesemiconductor substrate made of silicon, silicon carbide, or the like, acompound semiconductor substrate made of silicon germanium or the like,a silicon-on-insulator (SOI) substrate, or the like can be used. Furtheralternatively, any of these substrates further provided with asemiconductor element can be used.

The base insulating film 120 can be formed by a plasma CVD method, asputtering method, or the like using an oxide insulating film ofaluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride,gallium oxide, germanium oxide, yttrium oxide, zirconium oxide,lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, or thelike; a nitride insulating film of silicon nitride, silicon nitrideoxide, aluminum nitride, aluminum nitride oxide, or the like; or a filmin which any of the above materials are mixed. Alternatively, a stackincluding any of the above materials may be used, and at least an upperlayer of the base insulating film 120 which is in contact with the oxidesemiconductor layer 130 is preferably formed using a material containingexcess oxygen that might serve as a supply source of oxygen to the oxidesemiconductor layer 130.

Oxygen may be added to the base insulating film 120 by an ionimplantation method, an ion doping method, a plasma immersion ionimplantation method, or the like. Adding oxygen enables the baseinsulating film 120 to supply oxygen much easily to the oxidesemiconductor layer 130.

In the case where a surface of the substrate 110 is made of an insulatorand there is no influence of impurity diffusion to the oxidesemiconductor layer 130 to be formed later, the base insulating film 120is not necessarily provided.

Next, a first oxide semiconductor film 331 to be the first oxidesemiconductor layer 131 and a second oxide semiconductor film 332 to bethe second oxide semiconductor layer 132 are deposited over the baseinsulating film 120 by a sputtering method, a CVD method, an MBE method,an ALD method, or a PLD method (see FIG. 7A).

Subsequently, the first oxide semiconductor film 331 and the secondoxide semiconductor film 332 are selectively etched to form the firstoxide semiconductor layer 131 and the second oxide semiconductor layer132 (see FIG. 7B). At this time, the base insulating film 120 may alsobe etched slightly as illustrated in FIG. 7B. The slightly etched baseinsulating film 120 enables the second oxide semiconductor layer 132 tobe easily covered by the gate electrode that is formed later. Further,the second oxide semiconductor layer 132 is formed to have a curvaturefrom its top surface to its side surface in the cross section in thechannel width direction of the transistor.

Note that when the first oxide semiconductor film 331 and the secondoxide semiconductor film 332 are selectively etched, not only aphotoresist but also a hard mask such as a metal film can be used. Inaddition, an organic resin may be formed over the metal film. As themetal film, for example, a tungsten film with a thickness ofapproximately 5 nm can be used.

For the etching, dry etching in which a difference between the etchingrate of the first oxide semiconductor film 331 and that of the secondoxide semiconductor film 332 is small is preferably used.

In order to form a continuous energy band in a stack including the firstoxide semiconductor layer 131 and the second oxide semiconductor layer132, the layers are preferably formed successively without exposure tothe air with the use of a multi-chamber deposition apparatus (e.g., asputtering apparatus) including a load lock chamber. It is preferablethat each chamber of the sputtering apparatus be able to be evacuated toa high vacuum (to approximately higher than or equal to 5×10⁻⁷ Pa andlower than or equal to 1×10⁻⁴ Pa) by an adsorption vacuum pump such as acryopump and that the chamber be able to heat a substrate over which afilm is to be deposited to 100° C. or higher, preferably 500° C. orhigher, so that water and the like acting as impurities of an oxidesemiconductor are removed as much as possible. Alternatively, acombination of a turbo molecular pump and a cold trap is preferably usedto prevent back-flow of a gas containing a carbon component, moisture,or the like from an exhaust system into the chamber.

Not only high vacuum evacuation of the chamber but also high purity of asputtering gas is necessary to obtain a highly purified intrinsic oxidesemiconductor. An oxygen gas or an argon gas used as the sputtering gasis highly purified to have a dew point of −40° C. or lower, preferably−80° C. or lower, further preferably −100° C. or lower, so that entry ofmoisture and the like into the oxide semiconductor layer can beprevented as much as possible.

For the first oxide semiconductor layer 131, the second oxidesemiconductor layer 132, and the third oxide semiconductor layer 133formed in a later step, any of the materials described in Embodiment 1can be used. For example, an In—Ga—Zn oxide whose atomic ratio of In toGa and Zn is 1:3:6, 1:3:4, 1:3:3, or 1:3:2 can be used for the firstoxide semiconductor layer 131, an In—Ga—Zn oxide whose atomic ratio ofIn to Ga and Zn is 1:1:1 or 5:5:6 can be used for the second oxidesemiconductor layer 132, and an In—Ga—Zn oxide whose atomic ratio of Into Ga and Zn is 1:3:6, 1:3:4, 1:3:3, or 1:3:2 can be used for the thirdoxide semiconductor layer 133.

An oxide semiconductor that can be used for each of the first oxidesemiconductor layer 131, the second oxide semiconductor layer 132, andthe third oxide semiconductor layer 133 preferably contains at leastindium (In) or zinc (Zn). Alternatively, the oxide semiconductorpreferably contains both In and Zn. In order to reduce variations in theelectrical characteristics of the transistor including the oxidesemiconductor, the oxide semiconductor preferably contains a stabilizerin addition to In and/or Zn.

Examples of a stabilizer include gallium (Ga), tin (Sn), hafnium (Hf),aluminum (Al), and zirconium (Zr). Other examples of a stabilizer arelanthanoids such as lanthanum (La), cerium (Ce), praseodymium (Pr),neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium(Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm),ytterbium (Yb), and lutetium (Lu).

As the oxide semiconductor, for example, any of the following can beused: indium oxide, tin oxide, zinc oxide, an In—Zn oxide, a Sn—Znoxide, an Al—Zn oxide, a Zn—Mg oxide, a Sn—Mg oxide, an In—Mg oxide, anIn—Ga oxide, an In—Ga—Zn oxide, an In—Al—Zn oxide, an In—Sn—Zn oxide, aSn—Ga—Zn oxide, an Al—Ga—Zn oxide, a Sn—Al—Zn oxide, an In—Hf—Zn oxide,an In—La—Zn oxide, an In—Ce—Zn oxide, an In—Pr—Zn oxide, an In—Nd—Znoxide, an In—Sm—Zn oxide, an In—Eu—Zn oxide, an In—Gd—Zn oxide, anIn—Tb—Zn oxide, an In—Dy—Zn oxide, an In—Ho—Zn oxide, an In—Er—Zn oxide,an In—Tm—Zn oxide, an In—Yb—Zn oxide, an In—Lu—Zn oxide, an In—Sn—Ga—Znoxide, an In—Hf—Ga—Zn oxide, an In—Al—Ga—Zn oxide, an In—Sn—Al—Zn oxide,an In—Sn—Hf—Zn oxide, and an In—Hf—Al—Zn oxide.

Note that here, for example, an “In—Ga—Zn oxide” means an oxidecontaining In, Ga, and Zn as its main components. The In—Ga—Zn oxide maycontain a metal element other than In, Ga, and Zn. Further, in thisspecification, a film formed using an In—Ga—Zn oxide is also referred toas an IGZO film.

Alternatively, a material represented by InMO₃(ZnO)_(m) (m>0, where m isnot an integer) may be used. Note that M represents one or more metalelements selected from Ga, Y, Zr, La, Ce, and Nd. Further alternatively,a material represented by In₂SnO₅(ZnO)_(n) (n>0, where n is an integer)may be used.

Note that as described in Embodiment 1 in detail, materials are selectedso that the first oxide semiconductor layer 131 and the third oxidesemiconductor layer 133 each have an electron affinity lower than thatof the second oxide semiconductor layer 132.

The oxide semiconductor layers are each preferably formed by asputtering method. As a sputtering method, an RF sputtering method, a DCsputtering method, an AC sputtering method, or the like can be used.

In the case of using an In—Ga—Zn oxide, a material whose atomic ratio ofIn to Ga and Zn is any of 1:1:1, 2:2:1, 3:1:2, 5:5:6, 1:3:2, 1:3:3,1:3:4, 1:3:6, 1:4:3, 1:5:4, 1:6:6, 2:1:3 1:6:4, 1:9:6, 1:1:4, and 1:1:2is used for the first oxide semiconductor layer 131, the second oxidesemiconductor layer 132, and/or the third oxide semiconductor layer 133so that the first oxide semiconductor layer 131 and the third oxidesemiconductor layer 133 each have an electron affinity lower than thatof the second oxide semiconductor layer 132.

Note that for example, in the case where the composition of an oxidecontaining In, Ga, and Zn at the atomic ratio, In:Ga:Zn=a:b:c (a+b+c=1),is in the neighborhood of the composition of an oxide containing In, Ga,and Zn at the atomic ratio, In:Ga:Zn=A:B:C (A+B+C=1), a, b, and csatisfy the following relation: (a−A)²+(b−B)²+(c−C)²≤r², and r may be0.05, for example. The same applies to other oxides.

The indium content of the second oxide semiconductor layer 132 ispreferably higher than the indium content of the first oxidesemiconductor layer 131 and the indium content of the third oxidesemiconductor layer 133. In an oxide semiconductor, the s orbital ofheavy metal mainly contributes to carrier transfer, and when theproportion of In in the oxide semiconductor is increased, overlap of thes orbitals is likely to be increased. Thus, an oxide having acomposition in which the proportion of In is higher than that of Ga hashigher mobility than an oxide having a composition in which theproportion of In is equal to or lower than that of Ga. For this reason,with the use of an oxide having a high indium content for the secondoxide semiconductor layer 132, a transistor having high mobility can beachieved.

A structure of an oxide semiconductor film is described below.

Note that in this specification, a term “parallel” indicates that theangle formed between two straight lines is greater than or equal to −10°and less than or equal to 10°, and accordingly also includes the casewhere the angle is greater than or equal to −5° and less than or equalto 5°. In addition, a term “perpendicular” indicates that the angleformed between two straight lines is greater than or equal to 80° andless than or equal to 100°, and accordingly includes the case where theangle is greater than or equal to 85° and less than or equal to 95°.

In this specification, the trigonal and rhombohedral crystal systems areincluded in the hexagonal crystal system.

An oxide semiconductor film is classified roughly into a single-crystaloxide semiconductor film and a non-single-crystal oxide semiconductorfilm. The non-single-crystal oxide semiconductor film includes any of ac-axis aligned crystalline oxide semiconductor (CAAC-OS) film, apolycrystalline oxide semiconductor film, a microcrystalline oxidesemiconductor film, an amorphous oxide semiconductor film, and the like.

First, a CAAC-OS film is described.

The CAAC-OS film is one of oxide semiconductor films including aplurality of crystal parts, and most of the crystal parts each fitinside a cube whose one side is less than 100 nm. Thus, there is a casewhere a crystal part included in the CAAC-OS film fits inside a cubewhose one side is less than 10 nm, less than 5 nm, or less than 3 nm.

In a transmission electron microscope (TEM) image of the CAAC-OS film, aboundary between crystal parts, that is, a grain boundary is not clearlyobserved. Thus, in the CAAC-OS film, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

According to the TEM image of the CAAC-OS film observed in a directionsubstantially parallel to a sample surface (cross-sectional TEM image),metal atoms are arranged in a layered manner in the crystal parts. Eachmetal atom layer has a morphology reflected by a surface over which theCAAC-OS film is formed (hereinafter, a surface over which the CAAC-OSfilm is formed is referred to as a formation surface) or a top surfaceof the CAAC-OS film, and is arranged in parallel to the formationsurface or the top surface of the CAAC-OS film.

On the other hand, according to the TEM image of the CAAC-OS filmobserved in a direction substantially perpendicular to the samplesurface (plan TEM image), metal atoms are arranged in a triangular orhexagonal configuration in the crystal parts. However, there is noregularity of arrangement of metal atoms between different crystalparts.

From the results of the cross-sectional TEM image and the plan TEMimage, alignment is found in the crystal parts in the CAAC-OS film.

A CAAC-OS film is subjected to structural analysis with an X-raydiffraction (XRD) apparatus. For example, when the CAAC-OS filmincluding an InGaZnO₄ crystal is analyzed by an out-of-plane method, apeak appears frequently when the diffraction angle (2θ) is around 31°.This peak is derived from the (009) plane of the InGaZnO₄ crystal, whichindicates that crystals in the CAAC-OS film have c-axis alignment, andthat the c-axes are aligned in a direction substantially perpendicularto the formation surface or the top surface of the CAAC-OS film.

On the other hand, when the CAAC-OS film is analyzed by an in-planemethod in which an X-ray enters a sample in a direction substantiallyperpendicular to the c-axis, a peak appears frequently when 28 is around56°. This peak is derived from the (110) plane of the InGaZnO₄ crystal.Here, analysis (φ scan) is performed under conditions where the sampleis rotated around a normal vector of a sample surface as an axis (φaxis) with 2θ fixed at around 56°. In the case where the sample is asingle-crystal oxide semiconductor film of InGaZnO₄, six peaks appear.The six peaks are derived from crystal planes equivalent to the (110)plane. On the other hand, in the case of a CAAC-OS film, a peak is notclearly observed even when φ scan is performed with 2θ fixed at around56°.

According to the above results, in the CAAC-OS film having c-axisalignment, while the directions of a-axes and b-axes are differentbetween crystal parts, the c-axes are aligned in a direction parallel toa normal vector of a formation surface or a normal vector of a topsurface. Thus, each metal atom layer arranged in a layered mannerobserved in the cross-sectional TEM image corresponds to a planeparallel to the a-b plane of the crystal.

Note that the crystal part is formed concurrently with deposition of theCAAC-OS film or is formed through crystallization treatment such as heattreatment. As described above, the c-axis of the crystal is aligned in adirection parallel to a normal vector of a formation surface or a normalvector of a top surface. Thus, for example, in the case where a shape ofthe CAAC-OS film is changed by etching or the like, the c-axis might notbe necessarily parallel to a normal vector of a formation surface or anormal vector of a top surface of the CAAC-OS film.

Further, the degree of crystallinity in the CAAC-OS film is notnecessarily uniform. For example, in the case where crystal growthleading to the CAAC-OS film occurs from the vicinity of the top surfaceof the film, the degree of the crystallinity in the vicinity of the topsurface is higher than that in the vicinity of the formation surface insome cases. Further, when an impurity is added to the CAAC-OS film, thecrystallinity in a region to which the impurity is added is changed, andthe degree of crystallinity in the CAAC-OS film varies depending onregions.

Note that when the CAAC-OS film with an InGaZnO₄ crystal is analyzed byan out-of-plane method, a peak of 2θ may also be observed at around 36°,in addition to the peak of 2θ at around 31°. The peak of 2θ at around36° indicates that a crystal having no c-axis alignment is included inpart of the CAAC-OS film. It is preferable that in the CAAC-OS film, apeak of 2θ appear at around 31° and a peak of 2θ do not appear at around36°.

The CAAC-OS film is an oxide semiconductor film having low impurityconcentration. The impurity is an element other than the main componentsof the oxide semiconductor film, such as hydrogen, carbon, silicon, or atransition metal element. In particular, an element that has higherbonding strength to oxygen than a metal element included in the oxidesemiconductor film, such as silicon, disturbs the atomic arrangement ofthe oxide semiconductor film by depriving the oxide semiconductor filmof oxygen and causes a reduction in crystallinity. Further, a heavymetal such as iron or nickel, argon, carbon dioxide, or the like has alarge atomic radius (or molecular radius), and thus disturbs the atomicarrangement of the oxide semiconductor film and causes a reduction incrystallinity when it is contained in the oxide semiconductor film. Notethat the impurity contained in the oxide semiconductor film might serveas a carrier trap or a carrier generation source.

Further, the CAAC-OS film is an oxide semiconductor film having a lowdensity of defect states. For example, an oxygen vacancy in the oxidesemiconductor film serves as a carrier trap or a carrier generationsource in some cases when hydrogen is captured therein.

The state in which the impurity concentration is low and the density ofdefect states is low (the number of oxygen vacancies is small) isreferred to as a highly purified intrinsic state or a substantiallyhighly purified intrinsic state. A highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor film has fewcarrier generation sources, and thus can have a low carrier density.Thus, a transistor including the oxide semiconductor film rarely hasnegative threshold voltage (is rarely normally on). The highly purifiedintrinsic or substantially highly purified intrinsic oxide semiconductorfilm has few carrier traps. Accordingly, the transistor including theoxide semiconductor film has small variations in electricalcharacteristics and high reliability. Electric charge trapped by thecarrier traps in the oxide semiconductor film takes a long time to bereleased, and might behave like fixed electric charge. Thus, thetransistor that includes the oxide semiconductor film having highimpurity concentration and a high density of defect states has unstableelectrical characteristics in some cases.

With the use of the CAAC-OS film in a transistor, variations in theelectrical characteristics of the transistor due to irradiation withvisible light or ultraviolet light are small.

Next, a microcrystalline oxide semiconductor film is described.

In an image obtained with a TEM, crystal parts cannot be found clearlyin the microcrystalline oxide semiconductor film in some cases. In mostcases, the size of a crystal part in the microcrystalline oxidesemiconductor film is greater than or equal to 1 nm and less than orequal to 100 nm, or greater than or equal to 1 nm and less than or equalto 10 nm. An oxide semiconductor film including nanocrystal (nc), whichis a microcrystal with a size greater than or equal to 1 nm and lessthan or equal to 10 nm, or a size greater than or equal to 1 nm and lessthan or equal to 3 nm, is specifically referred to as a nanocrystallineoxide semiconductor (nc-OS) film. In an image of the nc-OS film obtainedwith a TEM, for example, a crystal grain cannot be observed clearly insome cases.

In the nc-OS film, a microscopic region (e.g., a region with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, inparticular, a region with a size greater than or equal to 1 nm and lessthan or equal to 3 nm) has a periodic atomic order. Further, there is noregularity of crystal orientation between different crystal parts in thenc-OS film; thus, the orientation of the whole film is not observed.Accordingly, in some cases, the nc-OS film cannot be distinguished froman amorphous oxide semiconductor film depending on an analysis method.For example, when the nc-OS film is subjected to structural analysis byan out-of-plane method with an XRD apparatus using an X-ray having adiameter larger than that of a crystal part, a peak which shows acrystal plane does not appear. Further, a halo pattern is observed in anelectron diffraction pattern (also referred to as a selected-areaelectron diffraction pattern) of the nc-OS film obtained by using anelectron beam having a probe diameter (e.g., larger than or equal to 50nm) larger than the diameter of a crystal part. Meanwhile, spots areobserved in a nanobeam electron diffraction pattern of the nc-OS filmobtained by using an electron beam having a probe diameter (e.g., largerthan or equal to 1 nm and smaller than or equal to 30 nm) close to, orsmaller than or equal to the diameter of a crystal part. In some cases,in a nanobeam electron diffraction pattern of the nc-OS film, regionswith high luminance in a circular (ring) pattern are observed. Further,in a nanobeam electron diffraction pattern of the nc-OS film, aplurality of spots are shown in a ring-like region in some cases.

Since an nc-OS film is an oxide semiconductor film having moreregularity than an amorphous oxide semiconductor film, the nc-OS filmhas a lower density of defect states than the amorphous oxidesemiconductor film. However, there is no regularity of crystalorientation between different crystal parts in the nc-OS film; hence,the nc-OS film has a higher density of defect states than a CAAC-OSfilm.

Note that an oxide semiconductor film may be a stacked film includingtwo or more films of an amorphous oxide semiconductor film, amicrocrystalline oxide semiconductor film, and a CAAC-OS film, forexample.

A CAAC-OS film can be deposited by a sputtering method with apolycrystalline oxide semiconductor sputtering target, for example. Whenions collide with the sputtering target, a crystal region included inthe sputtering target may be separated from the target along the a-bplane; in other words, a sputtered particle having a plane parallel tothe a-b plane (a flat-plate-like sputtered particle or a pellet-likesputtered particle) might flake off from the target. In this case, theflat-plate-like sputtered particle or the pellet-like sputtered particleis electrically charged and thus reaches a substrate while maintainingits crystal state without being aggregated in plasma, whereby a CAAC-OSfilm can be formed.

In the case where the second oxide semiconductor layer 132 is formedusing an In-M-Zn oxide (M is Ga, Y, Zr, La, Ce, or Nd) and a sputteringtarget whose atomic ratio of In to M and Zn is a₁:b₁:c₁ is used forforming the second oxide semiconductor layer 132, a₁/b₁ is preferablygreater than or equal to ⅓ and less than or equal to 6, furtherpreferably greater than or equal to 1 and less than or equal to 6, andc₁/b₁ is preferably greater than or equal to ⅓ and less than or equal to6, further preferably greater than or equal to 1 and less than or equalto 6. Note that when c₁/b₁ is greater than or equal to 1 and less thanor equal to 6, a CAAC-OS film is easily formed as the second oxidesemiconductor layer 132. Typical examples of the atomic ratio of In to Mand Zn of the target are 1:1:1, 3:1:2, and 5:5:6.

In the case where the first oxide semiconductor layer 131 and the thirdoxide semiconductor layer 133 are each formed using an In-M-Zn oxide (Mis Ga, Y, Zr, La, Ce, or Nd) and a sputtering target whose atomic ratioof In to M and Zn is a₂:b₂:c₂ is used for forming the first oxidesemiconductor layer 131 and the third oxide semiconductor layer 133,a₂/b₂ is preferably less than a₁/b₁, and c₂/b₂ is preferably greaterthan or equal to ⅓ and less than or equal to 6, further preferablygreater than or equal to 1 and less than or equal to 6. Note that whenc₂/b₂ is greater than or equal to 1 and less than or equal to 6, CAAC-OSfilms are easily formed as the first oxide semiconductor layer 131 andthe third oxide semiconductor layer 133. Typical examples of the atomicratio of In to M and Zn of the target are 1:3:2, 1:3:3, 1:3:4, and1:3:6.

First heat treatment may be performed after the second oxidesemiconductor layer 132 is formed. The first heat treatment may beperformed at a temperature higher than or equal to 250° C. and lowerthan or equal to 650° C., preferably higher than or equal to 300° C. andlower than or equal to 500° C., in an inert gas atmosphere, in anatmosphere containing an oxidizing gas at 10 ppm or more, or underreduced pressure. Alternatively, the first heat treatment may beperformed in such a manner that heat treatment is performed in an inertgas atmosphere, and then another heat treatment is performed in anatmosphere containing an oxidizing gas at 10 ppm or more in order tocompensate desorbed oxygen. By the first heat treatment, thecrystallinity of the second oxide semiconductor layer 132 can beimproved, and in addition, impurities such as hydrogen and water can beremoved from the base insulating film 120 and the first oxidesemiconductor layer 131. Note that the first heat treatment may beperformed before etching for formation of the second oxide semiconductorlayer 132.

Next, a first conductive film to be the source electrode layer 140 andthe drain electrode layer 150 is formed over the first oxidesemiconductor layer 131 and the second oxide semiconductor layer 132.For the first conductive film, Al, Cr, Cu, Ta, Ti, Mo, W, or an alloymaterial containing any of these as its main component can be used. Forexample, a 100-nm-thick titanium film is formed by a sputtering methodor the like. Alternatively, a tungsten film may be formed by a CVDmethod.

Then, the first conductive film is etched so as to be divided over thesecond oxide semiconductor layer 132 to form the source electrode layer140 and the drain electrode layer 150 (see FIG. 7C). At this time, thefirst conductive film may be over-etched, so that the second oxidesemiconductor layer 132 is partly etched.

Subsequently, a third oxide semiconductor film 333 to be the third oxidesemiconductor layer 133 is formed over the first oxide semiconductorlayer 131, the second oxide semiconductor layer 132, the sourceelectrode layer 140, and the drain electrode layer 150. In the thirdoxide semiconductor film 333, a microcrystalline layer is formed in thevicinity of the interface with the second oxide semiconductor layer 132,and a crystalline layer in which c-axes are aligned is formed over themicrocrystalline layer.

Note that second heat treatment may be performed after the third oxidesemiconductor film 333 is formed. The second heat treatment can beperformed under the conditions similar to those of the first heattreatment. The second heat treatment can remove impurities such ashydrogen and water from the third oxide semiconductor film 333, thefirst oxide semiconductor layer 131, and the second oxide semiconductorlayer 132.

Next, an insulating film 360 to be the gate insulating film 160 isformed over the third oxide semiconductor film 333. The insulating film360 can be formed using aluminum oxide, magnesium oxide, silicon oxide,silicon oxynitride, silicon nitride oxide, silicon nitride, galliumoxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide,neodymium oxide, hafnium oxide, tantalum oxide, or the like. Theinsulating film 360 may be a stack including any of the above materials.The insulating film 360 can be formed by a sputtering method, a CVDmethod, an MBE method, an ALD method, a PLD method, or the like.

Then, a second conductive film 370 to be the gate electrode layer 170 isformed over the insulating film 360 (see FIG. 8A). For the secondconductive film 370, Al, Ti, Cr, Co, Ni, Cu, Y, Zr, Mo, Ru, Ag, Ta, W,or an alloy material containing any of these as its main component canbe used. The second conductive film 370 can be formed by a sputteringmethod, a CVD method, or the like. A stack including a conductive filmcontaining any of the above materials and a conductive film containingnitrogen, or a conductive film containing nitrogen may be used for thesecond conductive film 370.

After that, the second conductive film 370 is selectively etched using aresist mask to form the gate electrode layer 170.

Then, the insulating film 360 is selectively etched using the resistmask or the gate electrode layer 170 as a mask to form the gateinsulating film 160.

Subsequently, the third oxide semiconductor film 333 is etched using theresist mask or the gate electrode layer 170 as a mask to form the thirdoxide semiconductor layer 133 (see FIG. 8B).

The second conductive film 370, the insulating film 360, and the thirdoxide semiconductor film 333 may be etched individually or successively.Note that either dry etching or wet etching may be used as the etchingmethod, and an appropriate etching method may be selected individually.

Next, the insulating layer 180 and the insulating layer 185 are formedover the source electrode layer 140, the drain electrode layer 150, andthe gate electrode layer 170 (see FIG. 8C). The insulating layer 180 andthe insulating layer 185 can be formed using a material and a methodwhich are similar to those of the base insulating film 120. Note that itis particularly preferable to use aluminum oxide for the insulatinglayer 180.

Oxygen may be added to the insulating layer 180 by an ion implantationmethod, an ion doping method, a plasma immersion ion implantationmethod, or the like. Adding oxygen enables the insulating layer 180 tosupply oxygen much easily to the oxide semiconductor layer 130.

Next, third heat treatment may be performed. The third heat treatmentcan be performed under conditions similar to those of the first heattreatment. By the third heat treatment, excess oxygen is easily releasedfrom the base insulating film 120, the gate insulating film 160, and theinsulating layer 180, so that oxygen vacancies in the oxidesemiconductor layer 130 can be reduced.

Through the above process, the transistor 100 illustrated in FIGS. 1A to1C can be fabricated.

This embodiment can be combined as appropriate with any of the otherembodiments and an example in this specification.

Embodiment 3

In this embodiment, an example of a semiconductor device (storagedevice) which includes the transistor of one embodiment of the presentinvention, which can retain stored data even when not powered, and whichhas an unlimited number of write cycles is described with reference todrawings.

FIG. 9A is a cross-sectional view of the semiconductor device, and FIG.9B is a circuit diagram of the semiconductor device.

The semiconductor device illustrated in FIGS. 9A and 9B includes atransistor 3200 including a first semiconductor material in a lowerportion, and a transistor 3300 including a second semiconductor materialand a capacitor 3400 in an upper portion. Note that the transistor 100described in Embodiment 1 can be used as the transistor 3300.

One electrode of the capacitor 3400 is formed using the same material asa source electrode layer or a drain electrode layer of the transistor3300, the other electrode of the capacitor 3400 is formed using the samematerial as a gate electrode layer of the transistor 3300, and adielectric of the capacitor 3400 is formed using the same material asthe gate insulating film 160 and the third oxide semiconductor layer 133of the transistor 3300; thus, the capacitor 3400 can be formed at thesame time as the transistor 3300.

Here, the first semiconductor material and the second semiconductormaterial preferably have different energy gaps. For example, the firstsemiconductor material may be a semiconductor material (such as silicon)other than an oxide semiconductor, and the second semiconductor materialmay be the oxide semiconductor described in Embodiment 1. A transistorincluding a material other than an oxide semiconductor can operate athigh speed easily. In contrast, a transistor including an oxidesemiconductor enables charge to be retained for a long time owing to itselectrical characteristics, that is, the low off-state current.

Although both of the above transistors are n-channel transistors in thefollowing description, it is needless to say that p-channel transistorscan be used. The specific structure of the semiconductor device, such asa material used for the semiconductor device and the structure of thesemiconductor device, needs not to be limited to that described hereexcept for the use of the transistor described in Embodiment 1, which isformed using an oxide semiconductor, for retaining data.

The transistor 3200 in FIG. 9A includes a channel formation regionprovided in a substrate 3000 containing a semiconductor material (suchas crystalline silicon), impurity regions provided such that the channelformation region is provided therebetween, intermetallic compoundregions in contact with the impurity regions, a gate insulating filmprovided over the channel formation region, and a gate electrode layerprovided over the gate insulating film. Note that a transistor whosesource electrode layer and drain electrode layer are not illustrated ina drawing may also be referred to as a transistor for the sake ofconvenience. Further, in such a case, in description of a connection ofa transistor, a source region and a source electrode layer may becollectively referred to as a source electrode layer, and a drain regionand a drain electrode layer may be collectively referred to as a drainelectrode layer. That is, in this specification, the term “sourceelectrode layer” might include a source region.

An element isolation insulating layer 3100 is formed on the substrate3000 so as to surround the transistor 3200, and an insulating layer 3150is formed so as to cover the transistor 3200. Note that the elementisolation insulating layer 3100 can be formed by an element isolationtechnique such as local oxidation of silicon (LOCOS) or shallow trenchisolation (STI).

In the case where the transistor 3200 is formed using a crystallinesilicon substrate, for example, the transistor 3200 can operate at highspeed. Thus, when the transistor is used as a reading transistor, datacan be read at high speed.

The transistor 3300 is provided over the insulating layer 3150, and thewiring electrically connected to the source electrode layer or the drainelectrode layer of the transistor 3300 serves as the one electrode ofthe capacitor 3400. Further, the wiring is electrically connected to thegate electrode layer of the transistor 3200.

The transistor 3300 in FIG. 9A is a top-gate transistor in which achannel is formed in an oxide semiconductor layer. Since the off-statecurrent of the transistor 3300 is low, stored data can be retained for along period owing to such a transistor. In other words, refreshoperation becomes unnecessary or the frequency of the refresh operationin a semiconductor storage device can be extremely low, which leads to asufficient reduction in power consumption.

Further, an electrode 3250 is provided so as to overlap with thetransistor 3300 with the insulating layer 3150 provided therebetween. Bysupplying an appropriate potential to the electrode 3250 and using theelectrode 3250 as a second gate electrode, the threshold voltage of thetransistor 3300 can be controlled. In addition, long-term reliability ofthe transistor 3300 can be improved. When the electrode operates withthe same potential as that of the gate electrode of the transistor 3300,on-state current can be increased. Note that the electrode 3250 is notnecessarily provided.

The transistor 3300 and the capacitor 3400 can be formed over thesubstrate over which the transistor 3200 is formed as illustrated inFIG. 9A, which enables the degree of the integration of thesemiconductor device to be increased.

An example of a circuit configuration of the semiconductor device inFIG. 9A is illustrated in FIG. 9B.

In FIG. 9B, a first wiring 3001 is electrically connected to a sourceelectrode layer of the transistor 3200. A second wiring 3002 iselectrically connected to a drain electrode layer of the transistor3200. A third wiring 3003 is electrically connected to one of the sourceelectrode layer and the drain electrode layer of the transistor 3300. Afourth wiring 3004 is electrically connected to the gate electrode layerof the transistor 3300. The gate electrode layer of the transistor 3200and the other of the source electrode layer and the drain electrodelayer of the transistor 3300 are electrically connected to the oneelectrode of the capacitor 3400. A fifth wiring 3005 is electricallyconnected to the other electrode of the capacitor 3400. Note that acomponent corresponding to the electrode 3250 is not illustrated.

The semiconductor device in FIG. 9B utilizes a feature that thepotential of the gate electrode layer of the transistor 3200 can beretained, and thus enables writing, retaining, and reading of data asfollows.

Writing and retaining of data are described. First, the potential of thefourth wiring 3004 is set to a potential at which the transistor 3300 isturned on, so that the transistor 3300 is turned on. Accordingly, thepotential of the third wiring 3003 is supplied to the gate electrodelayer of the transistor 3200 and the capacitor 3400. That is, apredetermined charge is supplied to the gate electrode layer of thetransistor 3200 (writing). Here, one of two kinds of charges providingdifferent potential levels (hereinafter referred to as a low-levelcharge and a high-level charge) is supplied. After that, the potentialof the fourth wiring 3004 is set to a potential at which the transistor3300 is turned off, so that the transistor 3300 is turned off. Thus, thecharge supplied to the gate electrode layer of the transistor 3200 isretained (retaining).

Since the off-state current of the transistor 3300 is extremely low, thecharge of the gate electrode layer of the transistor 3200 is retainedfor a long time.

Next, reading of data is described. An appropriate potential (a readingpotential) is supplied to the fifth wiring 3005 while a predeterminedpotential (a constant potential) is supplied to the first wiring 3001,whereby the potential of the second wiring 3002 varies depending on theamount of charge retained in the gate electrode layer of the transistor3200. This is because in general, in the case of using an n-channeltransistor as the transistor 3200, an apparent threshold voltageV_(th_H) at the time when the high-level charge is given to the gateelectrode layer of the transistor 3200 is lower than an apparentthreshold voltage V_(th_L) at the time when the low-level charge isgiven to the gate electrode layer of the transistor 3200. Here, anapparent threshold voltage refers to the potential of the fifth wiring3005 which is needed to turn on the transistor 3200. Thus, the potentialof the fifth wiring 3005 is set to a potential V₀ which is betweenV_(th_H) and V_(th_L), whereby charge supplied to the gate electrodelayer of the transistor 3200 can be determined. For example, in the casewhere the high-level charge is supplied in writing and the potential ofthe fifth wiring 3005 is V₀ (>V_(th_H)), the transistor 3200 is turnedon. In the case where the low-level charge is supplied in writing, evenwhen the potential of the fifth wiring 3005 is V₀ (<V_(th_L)), thetransistor 3200 remains off. Thus, the data retained in the gateelectrode layer can be read by determining the potential of the secondwiring 3002.

Note that in the case where memory cells are arrayed, it is necessarythat only data of a desired memory cell be able to be read. The fifthwiring 3005 in the case where data is not read may be supplied with apotential at which the transistor 3200 is turned off regardless of thestate of the gate electrode layer, that is, a potential lower thanV_(th_H). Alternatively, the fifth wiring 3005 may be supplied with apotential at which the transistor 3200 is turned on regardless of thestate of the gate electrode layer, that is, a potential higher thanV_(th_L).

When including a transistor having a channel formation region formedusing an oxide semiconductor and having an extremely low off-statecurrent, the semiconductor device described in this embodiment canretain stored data for an extremely long time. In other words, refreshoperation becomes unnecessary or the frequency of the refresh operationcan be extremely low, which leads to a sufficient reduction in powerconsumption. Moreover, stored data can be retained for a long time evenwhen power is not supplied (note that a potential is preferably fixed).

Further, in the semiconductor device described in this embodiment, highvoltage is not needed for writing data and there is no problem ofdeterioration of elements. Unlike in a conventional nonvolatile memory,for example, it is not necessary to inject and extract electrons intoand from a floating gate; thus, a problem such as deterioration of agate insulating film is unlikely to be caused. That is, thesemiconductor device of the disclosed invention does not have a limit onthe number of times data can be rewritten, which is a problem of aconventional nonvolatile memory, and the reliability thereof isdrastically improved. Furthermore, data is written depending on thestate of the transistor (on or off), whereby high-speed operation can beeasily achieved.

As described above, a miniaturized and highly integrated semiconductordevice having high electrical characteristics can be provided.

This embodiment can be combined as appropriate with any of the otherembodiments and an example in this specification.

Embodiment 4

In this embodiment, a semiconductor device including the transistor ofone embodiment of the present invention, which can retain stored dataeven when not powered, which does not have a limit on the number ofwrite cycles, and which has a structure different from that described inEmbodiment 3, is described.

FIG. 10 illustrates an example of a circuit configuration of thesemiconductor device. In the semiconductor device, a first wiring 4500is electrically connected to a source electrode layer of a transistor4300, a second wiring 4600 is electrically connected to a gate electrodelayer of the transistor 4300, and a drain electrode layer of thetransistor 4300 is electrically connected to a first terminal of acapacitor 4400. Note that the transistor 100 described in Embodiment 1can be used as the transistor 4300 included in the semiconductor device.The first wiring 4500 can serve as a bit line and the second wiring 4600can serve as a word line.

The semiconductor device (a memory cell 4250) can have a connection modesimilar to that of the transistor 3300 and the capacitor 3400illustrated in FIGS. 9A and 9B. Thus, the capacitor 4400 can be formedin the same process and at the same time as the transistor 4300 in amanner similar to that of the capacitor 3400 described in Embodiment 3.

Next, writing and retaining of data in the semiconductor device (thememory cell 4250) illustrated in FIG. 10 are described.

First, a potential at which the transistor 4300 is turned on is suppliedto the second wiring 4600, so that the transistor 4300 is turned on.Accordingly, the potential of the first wiring 4500 is supplied to thefirst terminal of the capacitor 4400 (writing). After that, thepotential of the second wiring 4600 is set to a potential at which thetransistor 4300 is turned off, so that the transistor 4300 is turnedoff. Thus, the potential of the first terminal of the capacitor 4400 isretained (retaining).

The transistor 4300 including an oxide semiconductor has an extremelylow off-state current. For that reason, the potential of the firstterminal of the capacitor 4400 (or a charge accumulated in the capacitor4400) can be retained for an extremely long time by turning off thetransistor 4300.

Next, reading of data is described. When the transistor 4300 is turnedon, the first wiring 4500 which is in a floating state and the capacitor4400 are electrically connected to each other, and the charge isredistributed between the first wiring 4500 and the capacitor 4400. As aresult, the potential of the first wiring 4500 is changed. The amount ofchange in potential of the first wiring 4500 varies depending on thepotential of the first terminal of the capacitor 4400 (or the chargeaccumulated in the capacitor 4400).

For example, the potential of the first wiring 4500 after the chargeredistribution is (C_(B)×V_(B0)+C×V)/(C_(B)+C), where V is the potentialof the first terminal of the capacitor 4400, C is the capacitance of thecapacitor 4400, C_(B) is the capacitance component of the first wiring4500, and V_(B0) is the potential of the first wiring 4500 before thecharge redistribution. Thus, it can be found that, assuming that thememory cell 4250 is in either of two states in which the potential ofthe first terminal of the capacitor 4400 is V₁ and V₀ (V₁>V₀), thepotential of the first wiring 4500 in the case of retaining thepotential V₁ (=(C_(B)×V_(B0)+C×V₁)/(C_(B)+C)) is higher than thepotential of the first wiring 4500 in the case of retaining thepotential V₀ (=(C_(B)×V_(B0)+C×V₀)/(C_(B)+C)).

Then, by comparing the potential of the first wiring 4500 with apredetermined potential, data can be read.

As described above, the semiconductor device (the memory cell 4250)illustrated in FIG. 10 can retain charge that is accumulated in thecapacitor 4400 for a long time because the off-state current of thetransistor 4300 is extremely low. In other words, refresh operationbecomes unnecessary or the frequency of the refresh operation can beextremely low, which leads to a sufficient reduction in powerconsumption. Moreover, stored data can be retained for a long time evenwhen power is not supplied.

A substrate over which a driver circuit for the memory cell 4250 isformed and the memory cell 4250 illustrated in FIG. 10 are preferablystacked. When the memory cell 4250 and the driver circuit are stacked,the size of the semiconductor device can be reduced. Note that there isno limitation on the numbers of the memory cells 4250 and the drivercircuits which are stacked.

It is preferable that a semiconductor material of a transistor includedin the driver circuit be different from that of the transistor 4300. Forexample, silicon, germanium, silicon germanium, silicon carbide, orgallium arsenide can be used, and a single crystal semiconductor ispreferably used. A transistor formed using such a semiconductor materialcan operate at higher speed than a transistor formed using an oxidesemiconductor and is suitable for the driver circuit for the memory cell4250.

As described above, a miniaturized and highly integrated semiconductordevice having high electrical characteristics can be provided.

This embodiment can be combined as appropriate with any of the otherembodiments and an example in this specification.

Embodiment 5

In this embodiment, an example of a circuit including the transistor ofone embodiment of the present invention will be described with referenceto the drawings.

FIG. 11A is a circuit diagram of a semiconductor device and FIGS. 11Cand 11D are each a cross-sectional view of a semiconductor device. FIGS.11C and 11D each illustrate a cross-sectional view of a transistor 2100in a channel length direction on the left and a cross-sectional view ofthe transistor 2100 in a channel width direction on the right. In thecircuit diagram, “OS” is written beside a transistor in order to clearlydemonstrate that the transistor includes an oxide semiconductor.

The semiconductor devices illustrated in FIGS. 11C and 11D each includea transistor 2200 containing a first semiconductor material in a lowerportion and the transistor 2100 containing a second semiconductormaterial in an upper portion. Here, an example is described in which thetransistor 100 described in Embodiment 1 as an example is used as thetransistor 2100 containing the second semiconductor material.

Here, the first semiconductor material and the second semiconductormaterial preferably have different energy gaps. For example, the firstsemiconductor material may be a semiconductor material (e.g., silicon,germanium, silicon germanium, silicon carbide, or gallium arsenic) otherthan an oxide semiconductor, and the second semiconductor material maybe the oxide semiconductor described in Embodiment 1. A transistorincluding single crystal silicon or the like as a material other than anoxide semiconductor can operate at high speed easily. In contrast, atransistor including an oxide semiconductor has the low off-statecurrent.

Although the transistor 2200 is a p-channel transistor here, it isneedless to say that an n-channel transistor can be used to form acircuit having a different configuration. The specific structure of thesemiconductor device, such as a material used for the semiconductordevice and the structure of the semiconductor device, needs not to belimited to that described here except for the use of the transistordescribed in Embodiment 1, which is formed using an oxide semiconductor.

FIGS. 11A, 11C, and 11D each illustrate a configuration example of whatis called a CMOS circuit, in which a p-channel transistor and ann-channel transistor are connected in series and gates of thetransistors are connected.

The circuit can operate at high speed because the transistor of oneembodiment of the present invention including an oxide semiconductor hashigh on-state current.

FIG. 11C illustrates a configuration in which the transistor 2100 isprovided over the transistor 2200 with an insulating layer 2201 providedtherebetween. Further, a plurality of wirings 2202 are provided betweenthe transistor 2200 and the transistor 2100. Furthermore, wirings andelectrodes provided in the upper portion and the lower portion areelectrically connected to each other through a plurality of plugs 2203embedded in insulating layers. Note that an insulating layer 2204covering the transistor 2100, a wiring 2205 over the insulating layer2204, and a wiring 2206 formed by processing a conductive film that isalso used for a pair of electrodes of the transistor are provided.

When two transistors are stacked as described above, the area occupiedby the circuit can be reduced and a plurality of circuits can bearranged with higher density.

In FIG. 11C, one of a source and a drain of the transistor 2100 iselectrically connected to one of a source and a drain of the transistor2200 through the wirings 2202 and the plugs 2203. Further, the gate ofthe transistor 2100 is electrically connected to the gate of thetransistor 2200 through the wiring 2205, the wiring 2206, the plugs2203, the wiring 2202, and the like.

In the configuration illustrated in FIG. 11D, an opening portion inwhich the plug 2203 is embedded is provided in a gate insulating film ofthe transistor 2100, and the gate of the transistor 2100 is in contactwith the plug 2203 through the opening portion. Such a configurationmakes it possible to achieve the integration of the circuit easily andto reduce the lengths and the number of wirings and plugs used to besmaller than those in the configuration illustrated in FIG. 11C; thus,the circuit can operate at higher speed.

Note that when a connection between the electrodes of the transistor2100 and the transistor 2200 is changed from that in the configurationillustrated in FIG. 11C or FIG. 11D, a variety of circuits can beformed. For example, a circuit having a configuration in which a sourceand a drain of a transistor are connected to those of another transistoras illustrated in FIG. 11B can operate as what is called an analogswitch.

This embodiment can be combined as appropriate with any of the otherembodiments and an example in this specification.

Embodiment 6

In this embodiment, a semiconductor device which includes the transistorof one embodiment of the present invention and has an image sensorfunction for reading data of an object will be described.

FIG. 12 illustrates an example of an equivalent circuit of asemiconductor device having an image sensor function.

In a photodiode 610, one electrode is electrically connected to aphotodiode reset signal line 661, and the other electrode iselectrically connected to a gate of a transistor 640. One of a sourceand a drain of the transistor 640 is electrically connected to aphotosensor reference signal line 672, and the other of the source andthe drain thereof is electrically connected to one of a source and adrain of a transistor 650. A gate of the transistor 650 is electricallyconnected to a gate signal line 662, and the other of the source and thedrain thereof is electrically connected to a photosensor output signalline 671.

As the photodiode 610, for example, a pin photodiode in which asemiconductor layer having p-type conductivity, a high-resistancesemiconductor layer (semiconductor layer having i-type conductivity),and a semiconductor layer having n-type conductivity are stacked can beused.

With detection of light that enters the photodiode 610, data of anobject can be read. Note that a light source such as a backlight can beused at the time of reading data of an object.

Note that as each of the transistor 640 and the transistor 650, thetransistor 100 described in Embodiment 1 in which a channel is formed inan oxide semiconductor can be used. In FIG. 12, “OS” is written besideeach of the transistor 640 and the transistor 650 so that it can beclearly identified that the transistors include an oxide semiconductor.The transistor 640 and the transistor 650 are electrically stabletransistors that have high on-state current and less change inelectrical characteristics. With the transistor, the semiconductordevice having an image sensor function, which is illustrated in FIG. 12,can be highly reliable.

This embodiment can be combined as appropriate with any of the otherembodiments and an example in this specification.

Embodiment 7

The transistor described in Embodiments 1 and 2 can be used in asemiconductor device such as a display device, a storage device, a CPU,a digital signal processor (DSP), an LSI such as a custom LSI or aprogrammable logic device (PLD), a radio frequency identification(RF-ID), an inverter, or an image sensor. In this embodiment, electronicdevices each including the semiconductor device will be described.

Examples of the electronic devices having the semiconductor devicesinclude display devices of televisions, monitors, and the like, lightingdevices, personal computers, word processors, image reproductiondevices, portable audio players, radios, tape recorders, stereos,phones, cordless phones, mobile phones, car phones, transceivers,wireless devices, game machines, calculators, portable informationterminals, electronic notebooks, e-book readers, electronic translators,audio input devices, video cameras, digital still cameras, electricshavers, IC chips, high-frequency heating appliances such as microwaveovens, electric rice cookers, electric washing machines, electric vacuumcleaners, air-conditioning systems such as air conditioners,dishwashers, dish dryers, clothes dryers, futon dryers, electricrefrigerators, electric freezers, electric refrigerator-freezers,freezers for preserving DNA, radiation counters, and medical equipmentsuch as dialyzers and X-ray diagnostic equipment. In addition, theexamples of the electronic devices include alarm devices such as smokedetectors, heat detectors, gas alarm devices, and security alarmdevices. Further, the examples of the electronic devices also includeindustrial equipment such as guide lights, traffic lights, beltconveyors, elevators, escalators, industrial robots, and power storagesystems. In addition, moving objects and the like driven by fuel enginesand electric motors using power from non-aqueous secondary batteries arealso included in the category of electronic devices. Examples of themoving objects include electric vehicles (EV), hybrid electric vehicles(HEV) which include both an internal-combustion engine and a motor,plug-in hybrid electric vehicles (PHEV), tracked vehicles in whichcaterpillar tracks are substituted for wheels of these vehicles,motorized bicycles including motor-assisted bicycles, motorcycles,electric wheelchairs, golf carts, boats or ships, submarines,helicopters, aircrafts, rockets, artificial satellites, space probes,planetary probes, and spacecrafts. Some specific examples of theseelectronic devices are illustrated in FIGS. 13A to 13C.

In a television set 8000 illustrated in FIG. 13A, a display portion 8002is incorporated in a housing 8001. The display portion 8002 can displayan image and a speaker portion 8003 can output sound. A storage deviceincluding the transistor of one embodiment of the present invention canbe used for a driver circuit for operating the display portion 8002.

The television set 8000 may also include a CPU 8004 for performinginformation communication or a memory. For the CPU 8004 and the memory,a CPU or a storage device including the transistor of one embodiment ofthe present invention can be used.

An alarm device 8100 illustrated in FIG. 13A is a residential firealarm, which is an example of an electronic device including a sensorportion 8102 for smoke or heat and a microcomputer 8101. Note that themicrocomputer 8101 includes a storage device or a CPU including thetransistor of one embodiment of the present invention.

An air conditioner which includes an indoor unit 8200 and an outdoorunit 8204 illustrated in FIG. 13A is an example of an electronic deviceincluding the transistor, the storage device, the CPU, or the likedescribed in any of the above embodiments. Specifically, the indoor unit8200 includes a housing 8201, an air outlet 8202, a CPU 8203, and thelike. Although the CPU 8203 is provided in the indoor unit 8200 in FIG.13A, the CPU 8203 may be provided in the outdoor unit 8204.Alternatively, the CPU 8203 may be provided in both the indoor unit 8200and the outdoor unit 8204. By using any of the transistors of oneembodiment of the present invention for the CPU in the air conditioner,a reduction in power consumption of the air conditioner can be achieved.

An electric refrigerator-freezer 8300 illustrated in FIG. 13A is anexample of an electronic device including the transistor, the storagedevice, the CPU, or the like described in any of the above embodiments.Specifically, the electric refrigerator-freezer 8300 includes a housing8301, a door for a refrigerator 8302, a door for a freezer 8303, a CPU8304, and the like. In FIG. 13A, the CPU 8304 is provided in the housing8301. When the transistor of one embodiment of the present invention isused for the CPU 8304 of the electric refrigerator-freezer 8300, areduction in power consumption of the electric refrigerator-freezer 8300can be achieved.

FIGS. 13B and 13C illustrate an example of an electric vehicle which isan example of an electronic device. An electric vehicle 9700 is equippedwith a secondary battery 9701. The output of the electric power of thesecondary battery 9701 is adjusted by a circuit 9702 and the electricpower is supplied to a driving device 9703. The circuit 9702 iscontrolled by a processing unit 9704 including a ROM, a RAM, a CPU, orthe like which is not illustrated. When the transistor of one embodimentof the present invention is used for the CPU in the electric vehicle9700, a reduction in power consumption of the electric vehicle 9700 canbe achieved.

The driving device 9703 includes a DC motor or an AC motor either aloneor in combination with an internal-combustion engine. The processingunit 9704 outputs a control signal to the circuit 9702 on the basis ofinput data such as data of operation (e.g., acceleration, deceleration,or stop) by a driver or data during driving (e.g., data on an upgrade ora downgrade, or data on a load on a driving wheel) of the electricvehicle 9700. The circuit 9702 adjusts the electric energy supplied fromthe secondary battery 9701 in accordance with the control signal of theprocessing unit 9704 to control the output of the driving device 9703.In the case where the AC motor is mounted, although not illustrated, aninverter which converts a direct current into an alternate current isalso incorporated.

This embodiment can be combined as appropriate with any of the otherembodiments and an example in this specification.

Example

In this example, observation results of the stack including oxidesemiconductor layers described in Embodiment 1 will be described indetail.

FIG. 14 is a cross-sectional view illustrating a structure of a sampleused in this example. The sample includes a base insulating film 420over a substrate 410, a stack including a first oxide semiconductorlayer 431 and a second oxide semiconductor layer 432 over the baseinsulating film, and a third oxide semiconductor layer 433 formed overthe stack. Note that the first oxide semiconductor layer 431, the secondoxide semiconductor layer 432, and the third oxide semiconductor layer433 correspond to the first oxide semiconductor layer 131, the secondoxide semiconductor layer 132, and the third oxide semiconductor layer133 described in Embodiment 1, respectively.

Here, a method for forming the sample illustrated in FIG. 14 isdescribed.

First, a silicon wafer was used as the substrate 410, and the siliconwafer was subjected to thermal oxidation to form a silicon oxide filmserving as the base insulating film 420.

Next, a first In—Ga—Zn oxide film whose atomic ratio of In to Ga and Znis 1:3:4 and a second In—Ga—Zn oxide film whose atomic ratio of In to Gaand Zn is 1:1:1 were successively formed over the base insulating film420 by a sputtering method. Note that the thickness of the firstIn—Ga—Zn oxide film and the thickness of the second In—Ga—Zn oxide filmwere 20 nm and 15 nm, respectively.

The first In—Ga—Zn oxide film was formed under the following conditions:an In—Ga—Zn oxide whose diameter is 8 inches and whose atomic ratio ofIn to Ga and Zn is 1:3:4 was used as a target, a sputtering gascontaining argon and oxygen at a flow rate of 2:1 was used, thedeposition pressure was 0.4 Pa, the electric power (DC) of 0.5 kW wassupplied, the distance between the target and the substrate was 60 mm,and the substrate temperature was 200° C.

The second In—Ga—Zn oxide film was formed under the followingconditions: an In—Ga—Zn oxide whose diameter is 8 inches and whoseatomic ratio of In to Ga and Zn is 1:1:1 was used as a target, asputtering gas containing argon and oxygen at a flow rate of 2:1 wasused, the deposition pressure was 0.4 Pa, the electric power (DC) of 0.5kW was supplied, the distance between the target and the substrate was60 mm, and the substrate temperature was 300° C.

Then, the first In—Ga—Zn oxide film and the second In—Ga—Zn oxide filmwere subjected to heat treatment at 450° C. in a nitrogen atmosphere forone hour, and then subjected to heat treatment at 450° C. in an oxygenatmosphere for one hour.

After that, a 5-nm-thick tungsten film and a 20-nm-thick organic resinwere formed over the second In—Ga—Zn oxide film, and a resist mask wasformed by electron beam exposure.

Then, the organic resin and the tungsten film were selectively etchedusing the resist mask. As the etching, two steps of etching wereperformed using an inductively coupled plasma dry etching apparatus.

The first step of etching was performed under the following conditions:100% carbon tetrafluoride was used as an etching gas, the pressure was0.67 Pa, the electric power of 2000 W was supplied, the bias power was50 W, the substrate temperature was −10° C., and the etching time was 12seconds. The second step of etching was performed under the followingconditions: an etching gas containing carbon tetrafluoride and oxygen ata flow rate of 3:2 was used, the pressure was 2.0 Pa, the electric powerof 1000 W was supplied, the substrate bias power was 25 W, the substratetemperature was −10° C., and the etching time was 8 seconds.

Next, the first In—Ga—Zn oxide film and the second In—Ga—Zn oxide filmwere selectively etched using the organic resin and the tungsten film asa mask, so that a stack including the first oxide semiconductor layer431 and the second oxide semiconductor layer 432 was formed. The etchingwas performed under the following conditions: an inductively coupledplasma dry etching apparatus was used, an etching gas containing methaneand argon at a flow rate of 1:2 was used, the pressure was 1.0 Pa, theelectric power of 600 W was supplied, the substrate bias power was 100W, the substrate temperature was 70° C., and the etching time was 82seconds.

After that, the organic resin and the tungsten film were etched underthe following conditions: an inductively coupled plasma dry etchingapparatus was used, an etching gas containing carbon tetrafluoride andoxygen at a flow rate of 3:2 was used, the pressure was 2.0 Pa, theelectric power of 1000 W was supplied, the substrate bias power was 25W, the substrate temperature was −10° C., and the etching time was 6seconds.

Then, the third oxide semiconductor layer 433 was formed to have athickness of 10 nm over the stack including the first oxidesemiconductor layer 431 and the second oxide semiconductor layer 432 bya sputtering method.

The third oxide semiconductor layer 433 was formed under the followingconditions: an In—Ga—Zn oxide whose diameter is 8 inches and whoseatomic ratio of In to Ga and Zn is 1:3:4 was used as a target, asputtering gas containing argon and oxygen at a flow rate of 2:1 wasused, the deposition pressure was 0.4 Pa, the electric power (DC) of 0.5kW was supplied, the distance between the target and the substrate was60 mm, and the substrate temperature was 200° C.

FIG. 15A is a cross-sectional TEM image of a region surrounded by adotted line in FIG. 14. Although a crystal lattice is not observed in aregion of several nanometers in the first oxide semiconductor layer 431on the base insulating film 420 side, lattice fringes are observed in anupper portion of the region. Further, in the second oxide semiconductorlayer 432, lattice fringes that are similar to those in the first oxidesemiconductor layer 431 are observed. This means that the most part ofthe first oxide semiconductor layer 431 and the whole second oxidesemiconductor layer 432 are formed of crystalline layers, and thedirections of the lattice fringes demonstrate that the crystallinelayers are each a CAAC-OS film in which c-axes are aligned in thedirection perpendicular to its deposition surface.

In addition, although a crystal lattice is not observed in a region ofseveral nanometers in the third oxide semiconductor layer 433 on thefirst oxide semiconductor layer 431 side or on the second oxidesemiconductor layer 432 side, lattice fringes are observed in an upperportion of the region. This indicates that the third oxide semiconductorlayer 433 includes a microcrystalline layer 433 a and a crystallinelayer 433 b.

The lattice fringes in the crystalline layer 433 b have differentdirections in a region over the second oxide semiconductor layer 432 andin a region that is formed to face a side surface of the first oxidesemiconductor layer 431 or the second oxide semiconductor layer 432,which indicates that the crystalline layer 433 b is a CAAC-OS film inwhich c-axes are aligned in the direction perpendicular to itsdeposition surface.

Further, as apparent from FIG. 15B, which is an enlarged view of aregion surrounded by dotted lines in FIG. 15A, over a curved surface ofan edge portion of the second oxide semiconductor layer 432, crystalfringes of the crystalline layer 433 b in which c-axes are aligned in adirection perpendicular to the curved surface, with the microcrystallinelayer 433 a provided therebetween, are observed.

The above results of this example indicate that the stack including theoxide semiconductor layers, which is one embodiment of the presentinvention, can be formed.

This embodiment can be combined as appropriate with any of the otherembodiments in this specification.

This application is based on Japanese Patent Application serial no.2013-106337 filed with Japan Patent Office on May 20, 2013, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A transistor comprising: a first insulating filmover a substrate; and an oxide semiconductor layer comprising a firstlayer over the first insulating film and a second layer over and incontact with the first layer, wherein the oxide semiconductor layercomprises indium, gallium, and zinc, wherein the first layer comprises afirst crystal part, wherein the second layer comprises a second crystalpart whose c-axis is aligned in a direction substantially perpendicularto a deposition surface of the second layer, and wherein, in across-sectional transmission electron microscope image of the oxidesemiconductor layer, a crystal lattice is observed in a superficialportion of the second layer and the crystal lattice is not observed inthe first layer.
 2. The transistor according to claim 1, wherein, in across section in a channel width direction of the transistor, the firstlayer is in contact with the first insulating film.
 3. The transistoraccording to claim 1, wherein the first layer comprises a nanocrystalwith a size greater than or equal to 1 nm and less than or equal to 10nm.
 4. The transistor according to claim 1, further comprising a firstoxide semiconductor layer and a second oxide semiconductor layer belowthe first layer, wherein the first layer covers a side surface of thefirst oxide semiconductor layer and a side surface of the second oxidesemiconductor layer.
 5. The transistor according to claim 1, wherein athicknesses of the oxide semiconductor layer is greater than or equal to3 nm and less than or equal to 50 nm.
 6. The transistor according toclaim 1, wherein the second layer is thicker than the first layer. 7.The transistor according to claim 1, wherein the oxide semiconductorlayer further comprises tin, hafnium, aluminum, or zirconium.
 8. Atransistor comprising: a gate electrode over a substrate; a firstinsulating film comprising silicon oxide over the gate electrode; anoxide semiconductor layer comprising a first layer over and in contactwith the first insulating film and a second layer over and in contactwith the first layer; a source electrode and a drain electrodeelectrically connected to the oxide semiconductor layer; and a secondinsulating film comprising silicon oxide over and in contact with thesecond layer, wherein the oxide semiconductor layer comprises indium,gallium, and zinc, wherein the first layer comprises a first crystalpart, wherein the second layer comprises a second crystal part whosec-axis is aligned in a direction substantially perpendicular to adeposition surface of the second layer, and wherein, in across-sectional transmission electron microscope image of the oxidesemiconductor layer, a crystal lattice is observed in a superficialportion of the second layer and the crystal lattice is not observed inthe first layer.
 9. The transistor according to claim 8, wherein, in across section in a channel width direction of the transistor, the firstlayer is in contact with the first insulating film.
 10. The transistoraccording to claim 8, wherein the first layer comprises a nanocrystalwith a size greater than or equal to 1 nm and less than or equal to 10nm.
 11. The transistor according to claim 8, further comprising a firstoxide semiconductor layer and a second oxide semiconductor layer belowthe first layer, wherein the first layer covers a side surface of thefirst oxide semiconductor layer and a side surface of the second oxidesemiconductor layer.
 12. The transistor according to claim 8, wherein athicknesses of the oxide semiconductor layer is greater than or equal to3 nm and less than or equal to 50 nm.
 13. The transistor according toclaim 8, wherein the second layer is thicker than the first layer. 14.The transistor according to claim 8, wherein the oxide semiconductorlayer further comprises tin, hafnium, aluminum, or zirconium.